IPB600N25N3GATMA1 Infineon, IPB600N25N3GATMA1 Datasheet

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IPB600N25N3GATMA1

Manufacturer Part Number
IPB600N25N3GATMA1
Description
Mosfet n-Ch 250v 25a To263-3
Manufacturer
Infineon
Datasheet
Rev. 2.3
1)
2)
Features
• N-channel, normal level
• Excellent gate charge x R
• Very low on-resistance R
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
• Halogen-free according to IEC61249-2-21
• Ideal for high-frequency switching and synchronous rectification
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
OptiMOS
Type
Package
Marking
J-STD20 and JESD22
See figure 3
TM
3 Power-Transistor
IPB600N25N3 G
PG-TO263-3
600N25N
2)
j
=25 °C, unless otherwise specified
DS(on)
DS(on)
1)
product (FOM)
for target application
Symbol Conditions
I
I
E
dv /dt
V
P
T
D
D,pulse
AS
GS
tot
j
, T
IPP600N25N3 G
PG-TO220-3
600N25N
stg
T
T
T
I
T
D
C
C
C
C
=25 A, R
page 1
=25 °C
=100 °C
=25 °C
=25 °C
GS
=25 W
Product Summary
V
R
I
D
IPI600N25N3 G
PG-TO262-3
600N25N
DS
DS(on),max
IPB600N25N3 G
-55 ... 175
55/175/56
Value
100
210
±20
136
25
18
10
IPP600N25N3 G
IPI600N25N3 G
250
60
25
2011-07-14
Unit
A
mJ
kV/µs
V
W
°C
V
mW
A

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IPB600N25N3GATMA1 Summary of contents

Page 1

OptiMOS TM 3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC • Halogen-free ...

Page 2

Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance 3) ...

Page 3

Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time 4) Gate Charge Characteristics Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage ...

Page 4

Power dissipation P =f(T ) tot C 160 140 120 100 100 T [° Safe operating area I =f =25 ° parameter: t ...

Page 5

Typ. output characteristics I =f =25 ° parameter [ Typ. transfer characteristics I =f |>2 ...

Page 6

Drain-source on-state resistance =10 V DS(on 200 180 160 140 120 100 98 -60 - [° Typ. capacitances C ...

Page 7

Avalanche characteristics = =f parameter: T j(start) 100 10 125 ° [µ Drain-source breakdown voltage V =f BR(DSS 290 280 ...

Page 8

PG-TO220-3: Outline Rev. 2.3 IPB600N25N3 G page 8 IPP600N25N3 G IPI600N25N3 G 2011-07-14 ...

Page 9

PG-TO263-3: Outline Rev. 2.3 IPB600N25N3 G page 9 IPP600N25N3 G IPI600N25N3 G 2011-07-14 ...

Page 10

PG-TO262-3: Outline Rev. 2.3 IPB600N25N3 G page 10 IPP600N25N3 G IPI600N25N3 G 2011-07-14 ...

Page 11

... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system ...

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