IPB100N04S204ATMA1 Infineon, IPB100N04S204ATMA1 Datasheet
IPB100N04S204ATMA1
Related parts for IPB100N04S204ATMA1
IPB100N04S204ATMA1 Summary of contents
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OptiMOS ® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Type Package ...
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Parameter 2) Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current ...
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... Diode pulse current Diode forward voltage 2) Reverse recovery time 2) Reverse recovery charge 1) Current is limited by bondwire; with an R information see Application Note ANPS071E at www.infineon.com/optimos 2) Defined by design. Not subject to production test. 3) See diagram 13 4) Qualified at -20V and +20V. 5) Device 1.5 mm epoxy PCB FR4 with 6 cm connection ...
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Power dissipation ≥ tot C GS 350 300 250 200 150 100 100 T [° Safe operating area °C; ...
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Typ. output characteristics ° parameter 400 10V 350 300 250 200 150 100 Typ. transfer characteristics I = f(V ...
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Typ. Drain-source on-state resistance R = f(T ) DS(ON) j parameter -60 - [° Typ. capacitances C = f(V ...
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Typical avalanche energy parameter 80A D 900 800 700 600 500 400 300 200 100 [° Typ. drain-source breakdown voltage ...
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... Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies Office. effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered ...