IPB100N04S303ATMA1 Infineon, IPB100N04S303ATMA1 Datasheet

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IPB100N04S303ATMA1

Manufacturer Part Number
IPB100N04S303ATMA1
Description
Mosfet n-Ch 40v 100a To263-3
Manufacturer
Infineon
Datasheet
Rev. 1.0
OptiMOS
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Type
IPB100N04S3-03
IPI100N04S3-03
IPP100N04S3-03
®
-T Power-Transistor
2)
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
j
=25 °C, unless otherwise specified
Symbol
I
I
E
V
P
T
D
D,pulse
j
AS
GS
tot
, T
Marking
3PN0403
3PN0403
3PN0403
stg
T
T
T
I
T
D
C
C
C
C
=80 A
page 1
=25°C, V
=100°C, V
=25 °C
=25 °C
Conditions
PG-TO263-3-2
GS
GS
Product Summary
V
R
I
=10V
D
DS
DS(on)
=10V
IPI100N04S3-03, IPP100N04S3-03
1)
(SMD Version)
2)
PG-TO262-3-1
-55 ... +175
55/175/56
Value
100
100
400
898
±20
214
IPB100N04S3-03
PG-TO220-3-1
100
2.5
40
2007-05-03
Unit
A
mJ
V
W
°C
V
m
A

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IPB100N04S303ATMA1 Summary of contents

Page 1

OptiMOS ® -T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested Type ...

Page 2

Parameter 2) Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current ...

Page 3

... Diode forward voltage 2) Reverse recovery time 2) Reverse recovery charge 1) Current is limited by bondwire; with an R information see Application Note ANPS071E at www.infineon.com/optimos 2) Defined by design. Not subject to production test. 3) Device 1.5 mm epoxy PCB FR4 with 6 cm connection. PCB is vertical in still air. Rev. 1.0 ...

Page 4

Power dissipation ≥ tot C GS 250 200 150 100 100 T [° Safe operating area ° ...

Page 5

Typ. output characteristics ° parameter 600 500 400 300 200 100 Typ. transfer characteristics ...

Page 6

Typ. gate threshold voltage GS(th parameter 3.5 3 150µA 2.5 2 1.5 1 -60 - [° Typical forward diode characteristicis IF ...

Page 7

Typical avalanche energy parameter 4000 3500 20 A 3000 2500 2000 1500 40 A 1000 80 A 500 [° Typ. gate charge V = f(Q ...

Page 8

... Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

Page 9

Revision History Version Rev. 1.0 IPI100N04S3-03, IPP100N04S3-03 Date page 9 IPB100N04S3-03 Changes 2007-05-03 ...

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