IPB100N04S303ATMA1 Infineon, IPB100N04S303ATMA1 Datasheet
IPB100N04S303ATMA1
Related parts for IPB100N04S303ATMA1
IPB100N04S303ATMA1 Summary of contents
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OptiMOS ® -T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested Type ...
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Parameter 2) Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current ...
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... Diode forward voltage 2) Reverse recovery time 2) Reverse recovery charge 1) Current is limited by bondwire; with an R information see Application Note ANPS071E at www.infineon.com/optimos 2) Defined by design. Not subject to production test. 3) Device 1.5 mm epoxy PCB FR4 with 6 cm connection. PCB is vertical in still air. Rev. 1.0 ...
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Power dissipation ≥ tot C GS 250 200 150 100 100 T [° Safe operating area ° ...
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Typ. output characteristics ° parameter 600 500 400 300 200 100 Typ. transfer characteristics ...
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Typ. gate threshold voltage GS(th parameter 3.5 3 150µA 2.5 2 1.5 1 -60 - [° Typical forward diode characteristicis IF ...
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Typical avalanche energy parameter 4000 3500 20 A 3000 2500 2000 1500 40 A 1000 80 A 500 [° Typ. gate charge V = f(Q ...
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... Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...
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Revision History Version Rev. 1.0 IPI100N04S3-03, IPP100N04S3-03 Date page 9 IPB100N04S3-03 Changes 2007-05-03 ...