2N918JANTXV Semicoa, 2N918JANTXV Datasheet

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2N918JANTXV

Manufacturer Part Number
2N918JANTXV
Description
Manufacturer
Semicoa
Datasheet
• JANS F level (2N918JS F )
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
• Radiation testing (total dose) upon request
Copyright 200 9
Rev. F
• JANSR level (2N918JSR)
Description
S EMICOA Corporation offers:
• Screening and processing per MIL-PRF-19500
• JAN level (2N918J)
• JANTX level (2N91 8 JX)
• JANTXV level (2N918JV)
• JANS level (2N918JS)
Absolute Maximum Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation, T
Derate linearly above 25°C
Operating Junction Temperature
Storage Temperature
• JANTXV level (2N918JV)
2072 for JANTXV
Please contact S EMICOA for special configurations
www.SEMICOA.com or (714) 979-1900
A
Parameter
= 25°C
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
S EMICOA Corporation
Symbol
V
V
V
T
P
T
I
CEO
CBO
EBO
STG
C
T
J
Applications
• Ultra-high frequency transistor
• Low power
• NPN silicon transistor
Features
• Hermetically sealed TO-72 metal can
• Also available in chip configuration
• Chip geometry 0003
• Reference document:
Benefits
• Qualification Levels: JAN, JANTX, and
• Radiation testing available
MIL-PRF-19500/301
JANTXV , JANS, JANSR and JANSF
T
C
-65 to +200
= 25°C unless otherwise specified
Rating
1.14
200
15
30
50
3
Silicon NPN Transistor
2N918
D a t a S h e e t
mW/°C
Volts
Volts
Volts
Unit
mW
mA
°C
Page 1 of 2

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2N918JANTXV Summary of contents

Page 1

... QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV • Radiation testing (total dose) upon request Please contact S EMICOA for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage ...

Page 2

... CB C η 500 MHz Volts mA 500 MHz S EMICOA Corporation www.SEMICOA.com 2N918 Silicon NPN Transistor characteristics specified at T Min Typ Max Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% ...

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