SIT8002AI-43-25E-100.00000T SiTime, SIT8002AI-43-25E-100.00000T Datasheet
SIT8002AI-43-25E-100.00000T
Specifications of SIT8002AI-43-25E-100.00000T
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SIT8002AI-43-25E-100.00000T Summary of contents
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... Connect to Ground 3 OUT 1 to 125 MHz Programmed Clock output 4 VDD Connect to 1.8V or 2.5V or 3.3V SiTime Corporation 990 Almanor Avenue, Suite 200 Rev. 1.03 Benefits • No crystal or capacitors required • Eliminates crystal qualification time • 50% + board saving space • Most cost effective than Quartz oscillators, Quartz crystals and Clock ICs. • ...
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... MEMS oscillators are inherently more reliable, have more consistent performance and are always in stock. The SiT8002, by eliminating the quartz crystals, has improved immunity to the environmental effects of vibration, shock, strain, and humidity. To order samples www.sitime.com and click on Request Sample” link. Min. -65 -0.5 – ...
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SiT8002 DC Electrical Specifications @VDD = 3.3V ±10%, -40 to 85°C Parameter Condition Voltage Output High IOH = -20 mA Voltage Output Low IOL = 20 mA Input Voltage High Pin 1 Input Voltage Low Pin 1 Operating Current Output ...
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SiT8002 AC Electrical Specifications @VDD = 3.3V ±10%, -40 to 85°C Parameter Condition Clock Output Frequency Frequency Tolerance Initial tolerance, operating temperature, rated power supply voltage change, load change,aging, shock and vibration Aging First year Clock Output Duty Cycle Output ...
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SiT8002 Ordering Information SiT8002AC - 14 - 33E - 123.12345T Part Family “SiT8002” Revision Letter “A” is the revision Temperature Range “C” Commercial -10 to 70°C “I” Industrial -40 to 85°C Package Size “1” 2.5 x 2.0 mm “2” 3.2 ...
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SiT8002 Package Information [3] (continued) Dimension (mm) 3.2 x 2.5 x 0.85mm 3.2±0.15 5.0 x 3.2 x 0.85mm 5.0±0.10 7.0 x 5.0 x 0.85mm 7.0±0.15 Connect to Device’s GND Note: 3. xxxx top marking denotes manufacturing lot number. . Land ...
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... SiTime Corporation 2008. The information contained herein is subject to change at any time without notice. SiTime assumes no responsibility or liability for any loss, damage or defect of a Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a SiTime product, (ii) misuse or abuse including static discharge, neglect or accident, (iii) unauthorized modification or repairs which have been soldered or altered during assembly and are not capable of being tested by SiTime under its normal test conditions, or (iv) improper installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, thermal, or electrical stress ...