LCMXO640E-5FN256C

Manufacturer Part NumberLCMXO640E-5FN256C
DescriptionCPLD - Complex Programmable Logic Devices Use LCMXO640E-5FTN25
ManufacturerLattice
LCMXO640E-5FN256C datasheet
 

Specifications of LCMXO640E-5FN256C

RohsyesMemory TypeSRAM
Number Of Macrocells320Maximum Operating Frequency600 MHz
Delay Time3.5 nsNumber Of Programmable I/os159
Operating Supply Voltage1.2 VMaximum Operating Temperature+ 85 C
Minimum Operating Temperature0 CPackage / CaseFPBGA
Mounting StyleSMD/SMTFactory Pack Quantity450
Supply Current14 mASupply Voltage - Max1.26 V
Supply Voltage - Min1.14 V  
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Lattice Semiconductor
sysIO Single-Ended DC Electrical Characteristics
V
IL
Input/Output
Standard
Min. (V)
Max. (V)
LVCMOS 3.3
-0.3
0.8
LVTTL
-0.3
0.8
LVCMOS 2.5
-0.3
0.7
LVCMOS 1.8
-0.3
0.35V
CCIO
LVCMOS 1.5
-0.3
0.35V
CCIO
LVCMOS 1.2
-0.3
0.42
(“C” Version)
LVCMOS 1.2
-0.3
0.35V
(“E” Version)
PCI
-0.3
0.3V
CCIO
1. The average DC current drawn by I/Os between GND connections, or between the last GND in an I/O Bank and the end of an I/O Bank, as
shown in the logic signal connections table shall not exceed n * 8mA. Where n is the number of I/Os between Bank GND connections or
between the last GND in a Bank and the end of a Bank.
V
IH
V
Max.
OL
Min. (V)
Max. (V)
(V)
0.4
2.0
3.6
0.2
0.4
2.0
3.6
0.4
0.2
0.4
1.7
3.6
0.2
0.4
0.65V
3.6
CCIO
0.2
0.4
0.65V
3.6
CCIO
0.2
0.4
0.78
3.6
0.2
0.4
0.65V
3.6
CC
CC
0.2
0.5V
3.6
0.1V
CCIO
CCIO
3-7
DC and Switching Characteristics
MachXO Family Data Sheet
1
V
Min.
I
OH
OL
(V)
(mA)
(mA)
V
- 0.4
16, 12, 8, 4
-14, -12, -8, -4
CCIO
V
- 0.2
0.1
CCIO
2.4
16
V
- 0.4
12, 8, 4
-12, -8, -4
CCIO
V
- 0.2
0.1
CCIO
V
- 0.4
16, 12, 8, 4
-14, -12, -8, -4
CCIO
V
- 0.2
0.1
CCIO
V
- 0.4
16, 12, 8, 4
-14, -12, -8, -4
CCIO
V
- 0.2
0.1
CCIO
V
- 0.4
8, 4
-8, -4
CCIO
V
- 0.2
0.1
CCIO
V
- 0.4
6, 2
-6, -2
CCIO
V
- 0.2
0.1
CCIO
V
- 0.4
6, 2
-6, -2
CCIO
V
- 0.2
0.1
CCIO
0.9V
1.5
CCIO
1
I
OH
-0.1
-16
-0.1
-0.1
-0.1
-0.1
-0.1
-0.1
-0.5