71V3576S133PFGI IDT, 71V3576S133PFGI Datasheet - Page 7

• Manufacturer Part Number: 71V3576S133PFGI
• Description: SRAM
• Manufacturer: IDT
• Series: IDT71V3576Sr
• Type: SRAMr

Specifications of 71V3576S133PFGI

• Rohs: yes
• Organization: 128 K x 36
• Access Time: 4.2 ns
• Supply Voltage - Max: 3.465 V
• Supply Voltage - Min: 3.135 V
• Maximum Operating Current: 260 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Package / Case: TQFP-100
• Maximum Clock Frequency: 133 MHz
• Memory Type: Synchronous
• Part # Aliases: IDT71V3576S133PFGI

DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
NOTE:
1. The LBO pin will be internally pulled to V
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
AC Test Conditions
(V
NOTES:
1. All values are maximum guaranteed values.
2. At f = f
3. For I/Os V
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Timing Reference Levels
AC Test Load
IDT71V3576, IDT71V3578, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
3.3V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect
Symbol
DDQ
Symbol
I
I
I
SB1
SB2
I
DD
|I
V
V
ZZ
|I
|I
LZZ
LO
OL
OH
LI
|
|
|
= 3.3V)
MAX,
Operating Power Supply
Current
CMOS Standby Power
Supply Current
Clock Running Power
Supply Current
Full Sleep Mode Supply
Current
HD
inputs are cycling at the maximum frequency of read cycles of 1/t
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
ZZ and LBO Input Leakage Current
= V
DDQ
Parameter
- 0.2V, V
LD
= 0.2V. For other inputs V
Parameter
DD
Device Selected, Outputs Open, V
Device Deselected, Outputs Open, V
Device Deselected, Outputs Open, V
V
V
V
ZZ > V
and the ZZ pin will be internally pulled to V
DDQ
DDQ
DDQ
(1)
= Max., V
= Max., V
= Max., V
HD,
See Figure 1
V
0 to 3V
DD
1.5V
1.5V
2ns
HD
= Max.
IN
IN
IN
= V
Test Conditions
> V
> V
> V
DD
IH
HD
HD
5279 tbl 10
V
V
V
I
I
OL
OH
or < V
- 0.2V, V
DD
DD
OUT
or < V
or < V
= +8mA, V
= -8mA, V
= Max., V
= Max., V
= 0V to V
6.42
IL
CYC
LD
LD
7
, f = f
LD
, f = 0
, f = f
AC Test Load
(Typical, ns)
while ADSC = LOW; f=0 means no input lines are changing.
DD
DD
= 0.2V.
DD
IN
IN
MAX
DDQ
DD
DD
(1)
MAX
= 0V to V
= 0V to V
= Min.
= Max.,
ΔtCD
= Min.
(2,3)
(V
= Max.,
= Max.,
, Device Deselected
(2)
SS
(2,3)
Test Conditions
DD
if they are not actively driven in the application.
Figure 2. Lumped Capacitive Load, Typical Derating
DD
DD
= 3.3V ± 5%)
6
5
4
3
2
1
Commercial and Industrial Temperature Ranges
20 30 50
Com'l
295
105
30
30
I/O
150MHz
Capacitance (pF)
305
Ind
115
35
35
80
Figure 1. AC Test Load
100
Z
0
Com'l
= 50Ω
250
100
Min.
30
30
2.4
___
___
___
___
133MHz
50Ω
Max.
260
Ind
110
0.4
35
35
30
___
5
5
V
DDQ
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/2
200
Unit
Unit
µA
µA
µA
mA
mA
mA
mA
V
V
,
,