71V3577S80BQ IDT, 71V3577S80BQ Datasheet

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71V3577S80BQ

Manufacturer Part Number
71V3577S80BQ
Description
SRAM
Manufacturer
IDT
Datasheet

Specifications of 71V3577S80BQ

Part # Aliases
IDT71V3577S80BQ
Features
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Pin Description Summary
NOTE:
1. BW
©2012 Integrated Device Technology, Inc.
CS
CLK
I/O
A
CE
OE
GW
BWE
BW
ADV
ADSC
ADSP
LBO
TMS
TDI
TCK
TDO
TRST
ZZ
V
V
0
DD
SS
-A
0
0
128K x 36, 256K x 18 memory configurations
Supports fast access times:
Commercial:
– 6.5ns up to 133MHz clock frequency (TQFP package only)
Commercial and Industrial:
– 7.5ns up to 117MHz clock frequency
– 8.0ns up to 100MHz clock frequency
– 8.5ns up to 87MHz clock frequency
LBO input selects interleaved or linear burst mode
Self-timed write cycle with global write control (GW), byte write
enable (BWE), and byte writes (BWx)
3.3V core power supply
Power down controlled by ZZ input
3.3V I/O
Optional - Boundary Scan JTAG Interface (IEEE 1149.1
compliant)
Packaged in a JEDEC Standard 100-pin plastic thin quad
flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch ball
grid array
1
-I/O
, CS
, V
, BW
17
DDQ
31
3
1
, I/O
and BW
2
, BW
P1
3
-I/O
, BW
4
P4
are not applicable for the IDT71V3579.
4
(1)
Address Inputs
Chip Enable
Chip Selects
Output Enable
Global Write Enable
Byte Write Enable
Individual Byte Write Selects
Clock
Burst Address Advance
Address Status (Cache Controller)
Address Status (Processor)
Linear / Interleaved Burst Order
Test Mode Select
Test Data Input
Test Clock
Test Data Output
JTAG Reset (Optional)
Sleep Mode
Data Input / Output
Core Power, I/O Power
Ground
128K X 36, 256K X 18
3.3V Synchronous SRAMs
3.3V I/O, Flow-Through Outputs
Burst Counter, Single Cycle Deselect
1
Description
128K x 36/256K x 18. The IDT71V3577/79 SRAMs contain write, data,
address and control registers. There are no registers in the data output
path (flow-through architecture). Internal logic allows the SRAM to gen-
erate a self-timed write based upon a decision which can be left until the
end of the write cycle.
system designer, as the IDT71V3577/79 can provide four cycles of data
for a single address presented to the SRAM. An internal burst address
counter accepts the first cycle address from the processor, initiating the
access sequence. The first cycle of output data will flow-through from the
array after a clock-to-data access time delay from the rising clock edge of
the same cycle. If burst mode operation is selected (ADV=LOW), the
subsequent three cycles of output data will be available to the user on the
next three rising clock edges. The order of these three addresses are
defined by the internal burst counter and the LBO input pin.
CMOS process and are packaged in a JEDEC standard 14mm x 20mm
100-pin thin plastic quad flatpack (TQFP) as well as a 119 ball grid array
(BGA) and a 165 fine pitch ball grid array (fBGA).
The IDT71V3577/79 are high-speed SRAMs organized as
The burst mode feature offers the highest level of performance to the
The IDT71V3577/79 SRAMs utilize IDT’s latest high-performance
Supply
Supply
Output
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
I/O
IDT71V3577SA
IDT71V3579SA
Asynchronous
Asynchronous
Asynchronous
IDT71V3577S
IDT71V3579S
Synchronous
Synchronous
Synchronous
Synchronous
Synchronous
Synchronous
Synchronous
Synchronous
Synchronous
Synchronous
Synchronous
Synchronous
Synchronous
N/A
N/A
N/A
N/A
APRIL 2012
DC
DSC-6450/1
6450tbl 01

Related parts for 71V3577S80BQ

71V3577S80BQ Summary of contents

Page 1

... The burst mode feature offers the highest level of performance to the system designer, as the IDT71V3577/79 can provide four cycles of data for a single address presented to the SRAM. An internal burst address counter accepts the first cycle address from the processor, initiating the access sequence ...

Page 2

... LOW be left floating. This pin has an internal pullup. Only available in BGA package. Asynchronous sleep mode input. ZZ HIGH will gate the CLK internally and power down the IDT71V3577/79 to HIGH its lowest power consumption level. Data retention is guaranteed in Sleep Mode.This pin has an internal pull down ...

Page 3

... IDT71V3577S_79S, IDT71V3577SA_79SA, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with 3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect Functional Block Diagram LBO ADV CLK ADSC ADSP 16/17 GW BWE Powerdown OE 36/18 I I TMS TDI TCK TRST ...

Page 4

... IDT71V3577S_79S, IDT71V3577SA_79SA, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with 3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect Absolute Maximum Ratings Symbol Rating (2) V Terminal Voltage with TERM Respect to GND (3,6) V Terminal Voltage with TERM Respect to GND (4,6) V Terminal Voltage with TERM Respect to GND (5,6) V Terminal Voltage with ...

Page 5

... IDT71V3577S_79S, IDT71V3577SA_79SA, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with 3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect Pin Configuration – 128K x 36 100 DDQ I I DDQ ...

Page 6

... IDT71V3577S_79S, IDT71V3577SA_79SA, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with 3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect Pin Configuration – 256K x 18 100 DDQ I DDQ ...

Page 7

... IDT71V3577S_79S, IDT71V3577SA_79SA, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with 3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect Pin Configuration – 128K x 36, 119 BGA DDQ I I DDQ DDQ I I DDQ N I ...

Page 8

... IDT71V3577S_79S, IDT71V3577SA_79SA, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with 3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect Pin Configuration – 128K x 36, 165 fBGA ( I DDQ D I/O I DDQ E I/O I DDQ F I/O I ...

Page 9

... IDT71V3577S_79S, IDT71V3577SA_79SA, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with 3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range Symbol Parameter |I | Input Leakage Current LBO and JTAG Input Leakage Current | Output Leakage Current ...

Page 10

... IDT71V3577S_79S, IDT71V3577SA_79SA, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with 3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect Synchronous Truth Table Operation Address Used Deselected Cycle, Power Down None Deselected Cycle, Power Down None Deselected Cycle, Power Down None Deselected Cycle, Power Down ...

Page 11

... IDT71V3577S_79S, IDT71V3577SA_79SA, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with 3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect Synchronous Write Function Truth Table GW Operation Read Read Write all Bytes Write all Bytes (3) Write Byte 1 (3) Write Byte 2 (3) Write Byte 3 (3) Write Byte 4 NOTES: 1 ...

Page 12

... IDT71V3577S_79S, IDT71V3577SA_79SA, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with 3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect AC Electrical Characteristics (V = 3.3V ±5%, Commercial and Industrial Temperature Ranges) DD Symbol Clock Parameter t Clock Cycle Time CYC (1) Clock High Pulse Width t CH (1) Clock Low Pulse Width t CL ...

Page 13

... IDT71V3577S_79S, IDT71V3577SA_79SA, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with 3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect Timing Waveform of Flow-Through Read Cycle Commercial and Industrial Temperature Ranges (1,2) , 6.42 13 ...

Page 14

... IDT71V3577S_79S, IDT71V3577SA_79SA, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with 3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect Timing Waveform of Combined Flow-Through Read and Write Cycles Commercial and Industrial Temperature Ranges 6.42 14 (1,2,3) , ...

Page 15

... IDT71V3577S_79S, IDT71V3577SA_79SA, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with 3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect Timing Waveform of Write Cycle No Controlled Commercial and Industrial Temperature Ranges (1,2,3) 6. ...

Page 16

... IDT71V3577S_79S, IDT71V3577SA_79SA, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with 3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect Timing Waveform of Write Cycle No Byte Controlled Commercial and Industrial Temperature Ranges 6.42 16 (1,2,3) , ...

Page 17

... IDT71V3577S_79S, IDT71V3577SA_79SA, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with 3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect Timing Waveform of Sleep (ZZ) and Power-Down Modes Commercial and Industrial Temperature Ranges , 6.42 17 (1,2,3) ...

Page 18

... IDT71V3577S_79S, IDT71V3577SA_79SA, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with 3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect Non-Burst Read Cycle Timing Waveform CLK ADSP ADSC ADDRESS GW, BWE, BWx CE DATA OUT NOTES input is LOW, ADV is HIGH and LBO is Don't Care for this cycle. ...

Page 19

... IDT71V3577S_79S, IDT71V3577SA_79SA, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with 3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect JTAG Interface Specification (SA Version only JCL TCK (1) Device Inputs / TDI/TMS (2) Device Outputs / TDO t JRSR ( 3) TRST t JRST NOTES: 1. Device inputs = All device inputs except TDI, TMS and TRST. ...

Page 20

... IDT71V3577S_79S, IDT71V3577SA_79SA, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with 3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect JTAG Identification Register Definitions (SA Version only) Instruction Field Revision Number (31:28) IDT Device ID (27:12) IDT JEDEC ID (11:1) ID Register Indicator Bit (Bit 0) Available JTAG Instructions Instruction EXTEST SAMPLE/PRELOAD ...

Page 21

... IDT71V3577S_79S, IDT71V3577SA_79SA, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with 3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect Ordering Information XXX Power Speed Package Device Type Package Information 100 Pin Thin Quad Plastic Flatpack (TQFP) 119 Ball Grid Array (BGA) 165 Fine Pitch Ball Grid Array (fBGA) ...

Page 22

... CORPORATE HEADQUARTERS 6024 Silver Creek Valley Road San Jose, CA 95138 The IDT logo is a registered trademark of Integrated Device Technology, Inc. Released Y generation die step datasheet Added green (Restricted hazardous substance device) to the datasheet. Added Industrial temp range values to the 7.5ns speed in the DC chars table Removed die step indicator from the ordering information ...

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