MT45W1MW16BDGB-708 AT TR Micron Technology Inc, MT45W1MW16BDGB-708 AT TR Datasheet - Page 16

• Manufacturer Part Number: MT45W1MW16BDGB-708 AT TR
• Description: IC PSRAM 16MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W1MW16BDGB-708 AT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 16M (1M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1419-2

Figure 11:
PDF: 09005aef81cb58ed/Source: 09005aef81c7a667
16mb_burst_cr1_0_p23z_2.fm - Rev. H 4/08 EN
DQ[15:0]
LB#/UB#
A[19:0]
ADV#
WAIT
WE#
OE#
CLK
CE#
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
OH
OL
OH
OL
Refresh Collision During READ Operation
Additional WAIT states inserted to allow refresh completion.
High-Z
Note:
ADDRESS
VALID
tions, any disabled bytes will not be transferred to the RAM array and the internal value
will remain unchanged. During an asynchronous WRITE cycle, the data to be written is
latched on the rising edge of CE#, WE#, LB#, or UB#, whichever occurs first.
When both the LB# and UB# are disabled (HIGH) during an operation, the device will
disable the data bus from receiving or transmitting data. Although the device will seem
to be deselected, it remains in an active mode as long as CE# remains LOW.
Non-default BCR settings: Latency code two (three clocks); WAIT active LOW; WAIT
asserted during delay.
16Mb: 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
16
Micron Technology, Inc., reserves the right to change products or specifications without notice.
D[0]
D[1]
Bus Operating Modes
D[2]
UNDEFINED
©2005 Micron Technology, Inc. All rights reserved.
D[3]
DON’T CARE