MT45W1MW16BDGB-708 AT TR Micron Technology Inc, MT45W1MW16BDGB-708 AT TR Datasheet - Page 5

• Manufacturer Part Number: MT45W1MW16BDGB-708 AT TR
• Description: IC PSRAM 16MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W1MW16BDGB-708 AT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 16M (1M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1419-2

General Description
PDF: 09005aef81cb58ed/Source: 09005aef81c7a667
16mb_burst_cr1_0_p23z_2.fm - Rev. H 4/08 EN
Micron
low-power, portable applications. The MT45W1MW16BDGB is a 16Mb DRAM core
device organized as 1 Meg x 16 bits. This device includes an industry-standard
burst mode Flash interface that dramatically increases read/write bandwidth compared
with other low-power SRAM or Pseudo SRAM offerings.
For seamless operation on a burst Flash bus, CellularRAM products incorporate a trans-
parent self-refresh mechanism. The hidden refresh requires no additional support from
the system memory controller and has no significant impact on device read/write
performance.
Two user-accessible control registers define device operation. The bus configuration
register (BCR) defines how the CellularRAM device interacts with the system memory
bus and is nearly identical to its counterpart on burst mode Flash devices. The refresh
configuration register (RCR) is used to control how refresh is performed on the DRAM
array. These registers are automatically loaded with default settings during power-up
and can be updated anytime during normal operation.
Special attention has been focused on standby current consumption during self refresh.
CellularRAM products include three system-accessible mechanisms to minimize
standby current. Partial-array refresh (PAR) limits refresh to only that part of the DRAM
array that contains essential data. Temperature-compensated refresh (TCR) uses an on-
chip sensor to adjust the refresh rate to match the device temperature. The refresh rate
decreases at lower temperatures to minimize current consumption during standby. TCR
can also be set by the system for maximum device temperatures of +85°C, +45°C, and
+15°C. Deep power-down (DPD) halts the REFRESH operation altogether and is used
when no vital information is stored in the device. These three refresh mechanisms are
accessed through the RCR.
®
16Mb: 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
CellularRAM™ is a high-speed, CMOS PSRAM memory device developed for
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Micron Technology, Inc., reserves the right to change products or specifications without notice.
General Description
©2005 Micron Technology, Inc. All rights reserved.