MT45W1MW16BDGB-708 AT TR Micron Technology Inc, MT45W1MW16BDGB-708 AT TR Datasheet - Page 53

• Manufacturer Part Number: MT45W1MW16BDGB-708 AT TR
• Description: IC PSRAM 16MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W1MW16BDGB-708 AT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 16M (1M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1419-2

Figure 43:
PDF: 09005aef81cb58ed/Source: 09005aef81c7a667
16mb_burst_cr1_0_p23z_2.fm - Rev. H 4/08 EN
DQ[15:0]
LB#/UB#
A[19:0]
ADV#
WAIT
WE#
OE#
CLK
CE#
Burst READ Followed by Asynchronous WRITE (WE#-Controlled)
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IH
IL
IH
IL
OH
OL
OH
OL
Notes:
READ Burst Identified
ADDRESS
t
t
SP
CSP
t
t
VALID
(WE# = HIGH)
t
SP
SP
t
SP
CEW
1. When configured for synchronous mode (BCR[15] = 0), a refresh opportunity must be pro-
vided every
tions: a) clocked CE# HIGH, or b) CE# HIGH for greater than 15ns. Note that CellularRAM
Workgroup specification 1.0 requires CE# to be clocked HIGH to terminate the burst.
t
HD
t
t
HD
HD
t
HD
High-Z
16Mb: 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
t
ABA
t
CEM. A refresh opportunity is satisfied by either of the following two condi-
t
ACLK
t
OLZ
t
BOE
t
KHTL
t
CLK
OUTPUT
t
53
HD
VALID
t
KOH
t
OHZ
t
HZ
t
Micron Technology, Inc., reserves the right to change products or specifications without notice.
CBPH
High-Z
1
t
CEW
t
AS
DON’T CARE
t
t
CW
BW
ADDRESS
t
AW
VALID
t
WP
t
WC
©2005 Micron Technology, Inc. All rights reserved.
Timing Diagrams
t
VALID
INPUT
DW
t
HZ
UNDEFINED
t
WR
t
WPH
t
DH