MT45W1MW16BDGB-708 AT TR Micron Technology Inc, MT45W1MW16BDGB-708 AT TR Datasheet - Page 55

• Manufacturer Part Number: MT45W1MW16BDGB-708 AT TR
• Description: IC PSRAM 16MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W1MW16BDGB-708 AT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 16M (1M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1419-2

Figure 45:
PDF: 09005aef81cb58ed/Source: 09005aef81c7a667
16mb_burst_cr1_0_p23z_2.fm - Rev. H 4/08 EN
DQ[15:0]
LB#/UB#
A[19:0]
IN/OUT
ADV#
WAIT
WE#
OE#
CE#
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
OH
OL
Asynchronous WRITE Followed by Asynchronous READ – ADV# LOW
Notes:
High-Z
VALID ADDRESS
t CW
t WP
1. When configured for synchronous mode (BCR[15] = 0), CE# must remain HIGH for at least
DATA
t DH
5ns (
required after CE#-controlled WRITEs.
t WPH
t
t WC
CPH) to schedule the appropriate internal refresh operation. Otherwise,
16Mb: 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
VALID ADDRESS
t AW
t BW
t DW
DATA
t WR
High-Z
55
t HZ
t CPH
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
V
V
OH
OL
t BLZ
t LZ
t CO
t AA
VALID ADDRESS
DON’T CARE
t OLZ
©2005 Micron Technology, Inc. All rights reserved.
t OE
Timing Diagrams
OUTPUT
t HZ
VALID
UNDEFINED
t BHZ
t
CPH is only
t HZ
t OHZ