IS61WV5128BLL-10TLI ISSI, Integrated Silicon Solution Inc, IS61WV5128BLL-10TLI Datasheet

IC SRAM 4MBIT 10NS 44TSOP

IS61WV5128BLL-10TLI

Manufacturer Part Number
IS61WV5128BLL-10TLI
Description
IC SRAM 4MBIT 10NS 44TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
Asynchronousr
Datasheet

Specifications of IS61WV5128BLL-10TLI

Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
4M (512K x 8)
Speed
10ns
Interface
Parallel
Voltage - Supply
1.65 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
44-TSOP II
Access Time
10 ns
Supply Voltage (max)
3.6 V
Supply Voltage (min)
2.4 V
Maximum Operating Current
40 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Number Of Ports
1
Operating Supply Voltage
2.5 V, 3.3 V
Density
4Mb
Access Time (max)
10ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
2.5/3.3V
Address Bus
19b
Package Type
TSOP-II
Operating Temp Range
-40C to 85C
Supply Current
40mA
Operating Supply Voltage (min)
2.4V
Operating Supply Voltage (max)
3.6V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
44
Word Size
8b
Number Of Words
512K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
706-1108
IS61WV5128BLL-10TLI
Q4714568

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IS61WV5128BLL-10TLI
Manufacturer:
ISSI
Quantity:
675
Part Number:
IS61WV5128BLL-10TLI
Manufacturer:
PANASONIC
Quantity:
2 606
Part Number:
IS61WV5128BLL-10TLI
Manufacturer:
ISSI
Quantity:
20 000
Company:
Part Number:
IS61WV5128BLL-10TLI
Quantity:
10 000
Company:
Part Number:
IS61WV5128BLL-10TLI-TR
Quantity:
1 000
IS61WV5128BLL/BLS
IS64WV5128BLL/BLS
512K x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
FEATURES
HIGH SPEED: (IS61/64WV5128ALL/BLL)
• High-speed access time: 8, 10, 20 ns
• Low Active Power: 85 mW (typical)
• Low stand-by power: 7 mW (typical)
LOW POWER: (IS61/64WV5128ALS/BLS)
• High-speed access time: 25, 35 ns
• Low Active Power: 35 mW (typical)
• Low stand-by power: 0.6 mW (typical)
• Single power supply
• Fully static operation: no clock or refresh
• Three state outputs
• Industrial and Automotive temperature support
• Lead-free available
Integrated Silicon Solution, Inc. — www.issi.com
Rev. I
08/10/09
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat-
est version of this device specification before relying on any published information and before placing orders for products.
FUNCTIONAL BLOCK DIAGRAM
CMOS standby
CMOS standby
— V
— V
required
dd
dd
1.65V to 2.2V (IS61WV5128Axx)
2.4V to 3.6V (IS61/64WV5128Bxx)
I/O0-I/O7
A0-A18
V
GND
DD
OE
WE
CE
DECODER
CIRCUIT
CONTROL
CIRCUIT
DATA
I/O
DESCRIPTION
The
are very high-speed, low power, 524,288-word by
8-bit CMOS static RAMs. The IS61WV5128Axx and
IS61/64WV5128Bxx are fabricated using
performance CMOS technology. This highly reliable pro-
cess coupled with innovative circuit design techniques,
yields higher performance and low power consumption
devices.
When CE is HIGH (deselected), the device assumes
a standby mode at which the power dissipation can be
reduced down with CMOS input levels.
The IS61WV5128Axx and IS61/64WV5128Bxx operate
from a single power supply.
The IS61WV5128ALL and IS61/64WV5128BLL are avail-
able in 36-pin 400-mil SOJ, 36-pin mini BGA, and 44-pin
TSOP (Type II) packages.
The IS61WV5128ALS and IS61/64WV5128BLS are
available in 32-pinTSOP (Type I), 32-pin sTSOP (Type I),
32-pin SOP and 32-pin TSOP (Type II) packages.
MEMORY ARRAY
COLUMN I/O
ISSI
512K X 8
IS61WV5128Axx and IS61/64WV5128Bxx
AUGUST 2009
ISSI
's high-
1

Related parts for IS61WV5128BLL-10TLI

IS61WV5128BLL-10TLI Summary of contents

Page 1

... IS61WV5128BLL/BLS IS64WV5128BLL/BLS 512K x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM FEATURES HIGH SPEED: (IS61/64WV5128ALL/BLL) • High-speed access time • Low Active Power (typical) • Low stand-by power (typical) CMOS standby LOW POWER: (IS61/64WV5128ALS/BLS) • High-speed access time: 25 • Low Active Power (typical) • ...

Page 2

... IS61WV5128ALL/ALS, IS61WV5128BLL/BLS IS64WV5128BLL/BLS PIN CONFIGURATION (HIGH SPEED) (61/64WV5128ALL/BLL) 36 mini BGA I/ I/ GND I/O6 A18 A17 G I/O7 A16 A10 A12 H A11 PIN DESCRIPTIONS A0-A18 Address Inputs CE Chip Enable Input Output Enable Input OE Write Enable Input WE I/O0-I/O7 Bidirectional Ports V Power dd GND Ground NC No Connection ...

Page 3

... IS61WV5128ALL/ALS, IS61WV5128BLL/BLS IS64WV5128BLL/BLS PIN CONFIGURATION (LOW POWER) (61/64WV5128ALS/BLS) 32-pin TSOP (TYPE I), (Package Code T) 32-pin sTSOP (TYPE I) (Package Code H) A11 A13 A18 6 A15 A17 9 10 A16 A14 11 A12 PIN DESCRIPTIONS A0-A18 Address Inputs Chip Enable 1 Input CE OE Output Enable Input WE Write Enable Input ...

Page 4

... IS61WV5128ALL/ALS, IS61WV5128BLL/BLS IS64WV5128BLL/BLS DC ELECTRICAL CHARACTERISTICS Symbol Parameter V Output HIGH Voltage oh V Output LOW Voltage ol V Input HIGH Voltage Ih V Input LOW Voltage ( Input Leakage lI I Output Leakage lo Note (min.) = –0.3V DC; V (min.) = –2.0V AC (pulse width <10 ns). Not 100% tested (max 0.3V dC ...

Page 5

... IS61WV5128ALL/ALS, IS61WV5128BLL/BLS IS64WV5128BLL/BLS TRUTH TABLE Mode Not Selected (Power-down) Output Disabled Read Write ABSOLUTE MAXIMUM RATINGS Symbol Parameter V Terminal Voltage with Respect to GND terM V V Relates to GND Storage Temperature stg P Power Dissipation t Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device ...

Page 6

... Range Ambient Temperature Commercial 0°C to +70°C Industrial –40°C to +85°C Automotive –40°C to +125°C OPERATING RANGE (V ) (IS61WV5128BLL) DD Range Ambient Temperature Commercial 0°C to +70°C Industrial –40°C to +85°C Note: 1. When operated in the range of 2.4V-3.6V, the device meets 10ns. When operated in the range of 3.3V + 5%, the device meets 8ns ...

Page 7

... IS61WV5128ALL/ALS, IS61WV5128BLL/BLS IS64WV5128BLL/BLS LOW POWER (IS61WV5128ALS/BLS) OPERATING RANGE (V ) (IS61WV5128ALS) DD Range Ambient Temperature Commercial 0°C to +70°C Industrial –40°C to +85°C Automotive –40°C to +125°C OPERATING RANGE (V ) (IS61WV5128BLS) DD Range Ambient Temperature Commercial 0°C to +70°C Industrial –40°C to +85°C ...

Page 8

... IS61WV5128ALL/ALS, IS61WV5128BLL/BLS IS64WV5128BLL/BLS AC TEST CONDITIONS Parameter (2.4V-3.6V) Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Level (V ) Ref Output Load See Figures 1 and 2 AC TEST LOADS Z = 50Ω O OUTPUT Figure 1. 8 Unit Unit (3. 1V ...

Page 9

... IS61WV5128ALL/ALS, IS61WV5128BLL/BLS IS64WV5128BLL/BLS READ CYCLE SWITCHING CHARACTERISTICS Symbol Parameter t Read Cycle Time rC t Address Access Time AA t Output Hold Time ohA t CE Access Time ACe t OE Access Time doe High-Z Output (2) hzoe t ( Low-Z Output lzoe High-Z Output (2 hzCe Low-Z Output (2) lzCe ...

Page 10

... IS61WV5128ALL/ALS, IS61WV5128BLL/BLS IS64WV5128BLL/BLS READ CYCLE SWITCHING CHARACTERISTICS Symbol Parameter t Read Cycle Time rC t Address Access Time AA t Output Hold Time ohA t CE Access Time ACe t OE Access Time doe High-Z Output (2) hzoe Low-Z Output (2) lzoe High-Z Output (2 hzCe Low-Z Output (2) lzCe ...

Page 11

... IS61WV5128ALL/ALS, IS61WV5128BLL/BLS IS64WV5128BLL/BLS AC WAVEFORMS READ CYCLE NO. 1 (1,2) (Address Controlled) ( ADDRESS D OUT PREVIOUS DATA VALID READ CYCLE NO. 2 (1,3) (CE and OE Controlled) ADDRESS LZCE HIGH-Z D OUT Notes HIGH for a Read Cycle. 2. The device is continuously selected. OE Address is valid prior to or coincident with CE LOW transitions. ...

Page 12

... IS61WV5128ALL/ALS, IS61WV5128BLL/BLS IS64WV5128BLL/BLS WRITE CYCLE SWITCHING CHARACTERISTICS Symbol Parameter t Write Cycle Time Write End sCe t Address Setup Time Aw to Write End t Address Hold from Write End hA t Address Setup Time Pulse Width (OE = HIGH) 1 Pwe t WE Pulse Width (OE = LOW) 2 Pwe t Data Setup to Write End ...

Page 13

... IS61WV5128ALL/ALS, IS61WV5128BLL/BLS IS64WV5128BLL/BLS WRITE CYCLE SWITCHING CHARACTERISTICS Symbol Parameter t Write Cycle Time Write End sCe t Address Setup Time Aw to Write End t Address Hold from Write End hA t Address Setup Time Pulse Width (OE = HIGH) 1 Pwe t WE Pulse Width (OE = LOW) 2 Pwe t Data Setup to Write End ...

Page 14

... IS61WV5128ALL/ALS, IS61WV5128BLL/BLS IS64WV5128BLL/BLS AC WAVEFORMS WRITE CYCLE NO. 1 (1,2) (CE Controlled HIGH or LOW) ADDRESS DATA UNDEFINED OUT VALID ADDRESS t SCE PWE1 t PWE2 t t HZWE LZWE HIGH DATA VALID IN Integrated Silicon Solution, Inc. — www.issi.com t HA CE_WR1.eps Rev. I 08/10/09 ...

Page 15

... IS61WV5128ALL/ALS, IS61WV5128BLL/BLS IS64WV5128BLL/BLS WRITE CYCLE NO. 2 (1,2) (WE Controlled HIGH During Write Cycle) ADDRESS OE CE LOW DATA UNDEFINED OUT D IN Notes: 1. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the Write. 2. I/O will assume the High-Z state if OE > ...

Page 16

... IS61WV5128ALL/ALS, IS61WV5128BLL/BLS IS64WV5128BLL/BLS HIGH SPEED (IS61WV5128ALL/BLL) DATA RETENTION SWITCHING CHARACTERISTICS Symbol Parameter V V for Data Retention Data Retention Current dr t Data Retention Setup Time sdr t Recovery Time rdr Note 1: Typical values are measured 3.0V DATA RETENTION SWITCHING CHARACTERISTICS Symbol Parameter V V for Data Retention ...

Page 17

... IS61WV5128ALL/ALS, IS61WV5128BLL/BLS IS64WV5128BLL/BLS LOW POWER (IS61WV5128ALS/BLS) DATA RETENTION SWITCHING CHARACTERISTICS Symbol Parameter V V for Data Retention Data Retention Current dr t Data Retention Setup Time sdr t Recovery Time rdr Note 1: Typical values are measured 3.0V DATA RETENTION SWITCHING CHARACTERISTICS Symbol Parameter V V for Data Retention ...

Page 18

... Speed = 10ns for V dd Industrial Range: -40°C to +85°C Voltage Range: 2.4V to 3.6V Speed (ns) Order Part No IS61WV5128BLL-10BI 1 IS61WV5128BLL-10BLI IS61WV5128BLL-10TI IS61WV5128BLL-10TLI IS61WV5128BLL-10KLI Note: 1. Speed = 8ns for V = 3.3V + 5%. Speed = 10ns for V dd Industrial Range: -40°C to +85°C Voltage Range: 1.65V to 2.2V Speed (ns) Order Part No. 20 IS61WV5128ALL-20BI IS61WV5128ALL-20TI Automotive Range: -40° ...

Page 19

... IS61WV5128ALL/ALS, IS61WV5128BLL/BLS IS64WV5128BLL/BLS ORDERING INFORMATION (LOW POWER) Industrial Range: -40°C to +85°C Voltage Range: 2.4V to 3.6V Speed (ns) Order Part No. 25 IS61WV5128BLS-25TLI Integrated Silicon Solution, Inc. — www.issi.com Rev. I 08/10/09 Package TSOP (Type II), Lead-free 19 ...

Page 20

... IS61WV5128ALL/ALS, IS61WV5128BLL/BLS IS64WV5128BLL/BLS 20 Integrated Silicon Solution, Inc. — www.issi.com Rev. I 08/10/09 ...

Page 21

... IS61WV5128ALL/ALS, IS61WV5128BLL/BLS IS64WV5128BLL/BLS Integrated Silicon Solution, Inc. — www.issi.com Rev. I 08/10/09 21 ...

Page 22

... IS61WV5128ALL/ALS, IS61WV5128BLL/BLS IS64WV5128BLL/BLS 22 Integrated Silicon Solution, Inc. — www.issi.com Rev. I 08/10/09 ...

Page 23

... IS61WV5128ALL/ALS, IS61WV5128BLL/BLS IS64WV5128BLL/BLS Integrated Silicon Solution, Inc. — www.issi.com Rev. I 08/10/09 23 ...

Page 24

... IS61WV5128ALL/ALS, IS61WV5128BLL/BLS IS64WV5128BLL/BLS 24 Integrated Silicon Solution, Inc. — www.issi.com Rev. I 08/10/09 ...

Page 25

... IS61WV5128ALL/ALS, IS61WV5128BLL/BLS IS64WV5128BLL/BLS Integrated Silicon Solution, Inc. — www.issi.com Rev. I 08/10/09 25 ...

Related keywords