71V256SA10YG8 IDT, 71V256SA10YG8 Datasheet - Page 3

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71V256SA10YG8

Manufacturer Part Number
71V256SA10YG8
Description
SRAM 32Kx8 ASYNCHRONOUS 3.3V STATIC RAM
Manufacturer
IDT
Datasheet

Specifications of 71V256SA10YG8

Rohs
yes
Part # Aliases
IDT71V256SA10YG8
Recommended DC Operating
Conditions
NOTE:
1. V
DC Electrical Characteristics
(V
Ranges)
NOTES:
1. All values are maximum guaranteed values.
2. f
DC Electrical Characteristics
(V
Symbol
IDT71V256SA
3.3V CMOS Static RAM 256K (32K x 8-Bit)
Symbol
Symbol
CC
GND
CC
V
V
V
MAX
V
IL
V
I
|I
V
I
I
SB1
CC
|I
CC
SB
IH
IH
IL
LO
OL
OH
LI
(min.) = –2.0V for pulse width less than 5ns, once per cycle.
= 3.3V ± 0.3V, V
|
|
= 1/t
= 3.3V± 0.3V)
Supply Voltage
Ground
Input High Voltage - Inputs
Input High Voltage - I/O
Input Low Voltage
RC
Dynamic Operating Current CS < V
Open, V
Standby Power Supply Current (TTL Level)
CS = V
Full Standby Power Supply Current (CMOS Level)
CS > V
V
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
, only address inputs cycling at f
IN
< V
Parameter
IH
HC
LC
CC
, V
, V
or V
= Max., f = f
CC
CC
Parameter
IN
= Max., Outputs Open, f = f
= Max., Outputs Open, f = 0
> V
LC
HC
Parameter
= 0.2V, V
MAX
(2)
-0.3
Min.
3.0
2.0
2.0
0
MAX
(1)
; f = 0 means that no inputs are cycling.
IL
, Outputs
Typ.
3.3
____
____
____
HC
0
I
I
V
V
OL
OH
CC
CC
= 8mA, V
= -4mA, V
= V
MAX
= Max., V
= Max., CS = V
(2)
V
V
CC
CC
,
(2)
Max.
3.6
0.8
CC
0
(1)
+0.3
+0.3
CC
- 0.2V, Commercial and Industrial Temperature
CC
IN =
3101 tbl 06
= Min.
= Min.
Unit
71V256SA10
Test Conditions
V
V
V
V
V
GND to V
IH
6.42
, V
100
20
2
3
OUT
CC
= GND to V
71V256SA12
CC
90
20
2
Commercial and Industrial Temperature Ranges
71V256SA15
Min.
2.4
___
___
___
85
20
2
IDT71V256SA
Typ.
___
___
___
___
71V256SA20
85
20
2
Max.
0.4
___
2
2
3101 tbl 07
3101 tbl 08
Unit
Unit
mA
mA
mA
µA
µA
V
V

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