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M24256-BWMN6TP
M24256-BWMN6TP | |
|---|---|
| Manufacturer Part Number | M24256-BWMN6TP |
| Description | IC EEPROM 256KBIT 400KHZ 8SOIC |
| Manufacturer | STMicroelectronics |
| M24256-BWMN6TP datasheets |
|
Availability: In stock
International delivery:
Warranty: 60 days
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Specifications of M24256-BWMN6TP | |||
|---|---|---|---|
| Format - Memory | EEPROMs - Serial | Memory Type | EEPROM |
| Memory Size | 256K (32K x 8) | Speed | 400kHz |
| Interface | I²C, 2-Wire Serial | Voltage - Supply | 2.5 V ~ 5.5 V |
| Operating Temperature | -40°C ~ 85°C | Package / Case | 8-SOIC (3.9mm Width) |
| Density | 256Kb | Interface Type | Serial (I2C) |
| Organization | 32Kx8 | Access Time (max) | 900ns |
| Frequency (max) | 400KHz | Write Protection | Yes |
| Data Retention | 40Year | Operating Supply Voltage (typ) | 3.3/5V |
| Package Type | SOIC | Operating Temp Range | -40C to 85C |
| Supply Current | 5mA | Operating Supply Voltage (min) | 2.5V |
| Operating Supply Voltage (max) | 5.5V | Operating Temperature Classification | Industrial |
| Mounting | Surface Mount | Pin Count | 8 |
| Maximum Clock Frequency | 0.4 MHz | Access Time | 900 ns |
| Supply Voltage (max) | 5.5 V | Supply Voltage (min) | 2.5 V |
| Maximum Operating Current | 5 mA | Maximum Operating Temperature | + 85 C |
| Mounting Style | SMD/SMT | Minimum Operating Temperature | - 40 C |
| Operating Supply Voltage | 2.5 V, 5.5 V | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Other names | 497-8623-2 M24256-BWMN6TP | ||
PrevNext
M24256-BF, M24256-BR, M24256-BW, M24256-DR
Table 13.
DC characteristics (voltage range W, device grade 6)
Symbol
Parameter
Input leakage
current
I
LI
(SCL, SDA, E0, E1,
Output leakage
I
LO
current
Supply current
I
CC
(Read)
Supply current
I
CC0
(Write)
Standby supply
I
CC1
current
Input low voltage
V
IL
(SCL, SDA, WC)
Input high voltage
(SCL, SDA)
V
IH
Input high voltage
(WC, E0, E1, E2)
V
Output low voltage
OL
1. Only for devices operating at f
2. Characterized value, not tested in production.
3. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the
completion of the internal write cycle t
Test conditions (see
Table
V
= V
or V
IN
SS
CC
device in Standby mode
E2)
SDA in Hi-Z, external voltage applied on
SDA: V
or V
SS
CC
V
= 2.5 V, f
= 400 kHz
CC
c
(rise/fall time < 50 ns)
V
= 5.5 V, f
= 400 kHz
CC
c
(rise/fall time < 50 ns)
2.5 V < V
< 5.5 V, f
CC
(rise/fall time < 50 ns)
During t
, 2.5 V < V
W
Device not selected
V
= 2.5 V
CC
Device not selected
V
= 5.5 V
CC
I
= 2.1 mA, V
= 2.5 V or
OL
CC
I
= 3 mA, V
= 5.5 V
OL
CC
max = 1 MHz (see
Table
C
(t
is triggered by the correct decoding of a Write instruction).
W
W
Doc ID 6757 Rev 23
DC and AC parameters
Table 7
and
Min.
10)
(1)
= 1 MHz
c
< 5.5 V
CC
(3)
, V
= V
or V
,
IN
SS
CC
(3)
, V
= V
or V
,
IN
SS
CC
–0.45
0.7V
CC
0.7V
CC
17).
Max.
Unit
± 2
µA
± 2
µA
1
mA
2
mA
2.5
mA
(2)
5
mA
2
µA
3
µA
0.3V
V
CC
6.5
V
V
+0.6
CC
0.4
V
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