CY7C1363C-133AXC Cypress Semiconductor Corp, CY7C1363C-133AXC Datasheet

IC SRAM 9MBIT 133MHZ 100LQFP

CY7C1363C-133AXC

Manufacturer Part Number
CY7C1363C-133AXC
Description
IC SRAM 9MBIT 133MHZ 100LQFP
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1363C-133AXC

Memory Size
9M (512K x 18)
Format - Memory
RAM
Memory Type
SRAM - Synchronous
Speed
133MHz
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
100-LQFP
Memory Configuration
512K X 18 / 256K X 36
Clock Frequency
133MHz
Access Time
6.5ns
Supply Voltage Range
3.135V To 3.6V
Memory Case Style
TQFP
No. Of Pins
100
Density
9Mb
Access Time (max)
6.5ns
Sync/async
Synchronous
Architecture
SDR
Clock Freq (max)
133MHz
Operating Supply Voltage (typ)
3.3V
Address Bus
19b
Package Type
TQFP
Operating Temp Range
0C to 70C
Number Of Ports
2
Supply Current
250mA
Operating Supply Voltage (min)
3.135V
Operating Supply Voltage (max)
3.6V
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Pin Count
100
Word Size
18b
Number Of Words
512K
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
428-2131
CY7C1363C-133AXC

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1363C-133AXC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Part Number:
CY7C1363C-133AXCT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
9-Mbit (256 K × 36/512 K × 18) Flow-through SRAM
Features
Cypress Semiconductor Corporation
Document Number: 38-05541 Rev. *J
Notes
Supports 100, 133 MHz bus operations
Supports 100 MHz bus operations (Automotive)
256 K × 36/512 K × 18 common I/O
3.3 V – 5% and +10% core power supply (V
2.5 V or 3.3 V I/O power supply (V
Fast clock-to-output times
Provide high performance 2-1-1-1 access rate
User-selectable burst counter supporting Intel
interleaved or linear burst sequences
Separate processor and controller address strobes
Synchronous self-timed write
Asynchronous output enable
Available in Pb-free 100-pin TQFP package, Pb-free and non
Pb-free 119-ball BGA package, and 165-ball FPBGA package
TQFP available with 3-chip enable and 2-chip enable
IEEE 1149.1 JTAG-compatible boundary scan
“ZZ” sleep mode option
1. For best-practices recommendations, refer to the Cypress application note System Design Guidelines on www.cypress.com.
2. CE
6.5 ns (133-MHz version)
3
is for A version of TQFP (3 Chip Enable Option) and 165 FBGA package only. 119 BGA is offered only in 2 Chip Enable.
DDQ
)
DD
198 Champion Court
)
Pentium
Functional Description
The CY7C1361C/CY7C1363C
synchronous flow-through SRAMs, respectively designed to
interface with high speed microprocessors with minimum glue
logic. Maximum access delay from clock rise is 6.5 ns (133 MHz
version). A 2-bit on-chip counter captures the first address in a
burst and increments the address automatically for the rest of the
burst access. All synchronous inputs are gated by registers
controlled by a positive-edge-triggered clock input (CLK). The
synchronous inputs include all addresses, all data inputs,
address-pipelining chip enable (CE
enables (CE
and ADV), write enables (BW
(GW). Asynchronous inputs include the output enable (OE) and
the ZZ pin.
The CY7C1361C/CY7C1363C enables either interleaved or
linear burst sequences, selected by the MODE input pin. A HIGH
selects an interleaved burst sequence, while a LOW selects a
linear burst sequence. Burst accesses can be initiated with the
processor address strobe (ADSP) or the cache controller
address strobe (ADSC) inputs. Address advancement is
controlled by the address advancement (ADV) input.
Addresses and chip enables are registered at rising edge of
clock when either address strobe processor (ADSP) or address
strobe controller (ADSC) are active. Subsequent burst
addresses can be internally generated as controlled by the
advance pin (ADV).
The CY7C1361C/CY7C1363C operates from a +3.3 V core
power supply while all outputs may operate with either a +2.5 or
+3.3 V supply. All inputs and outputs are JEDEC-standard
JESD8-5-compatible.
9-Mbit (256 K × 36/512 K × 18)
San Jose
2
and CE
,
Flow-through SRAM
CY7C1361C/CY7C1363C
3
CA 95134-1709
[2]
), burst control inputs (ADSC, ADSP,
[1]
x
is a 3.3 V, 256 K × 36/512 K × 18
, and BWE), and global write
Revised November 29, 2010
1
), depth-expansion chip
408-943-2600
[+] Feedback

Related parts for CY7C1363C-133AXC

CY7C1363C-133AXC Summary of contents

Page 1

... Subsequent burst addresses can be internally generated as controlled by the advance pin (ADV). The CY7C1361C/CY7C1363C operates from a +3.3 V core power supply while all outputs may operate with either a +2.5 or +3.3 V supply. All inputs and outputs are JEDEC-standard JESD8-5-compatible. ...

Page 2

... DQP , BYTE WRITE REGISTER DQ DQP , BYTE BWE WRITE REGISTER GW ENABLE CE1 REGISTER CE2 CE3 OE SLEEP ZZ CONTROL Logic Block Diagram – CY7C1363C (512 K × 18) ADDRESS A0,A1,A REGISTER MODE ADV CLK ADSC ADSP DQ ,DQP B WRITE REGISTER ,DQP WRITE REGISTER BWE GW ENABLE CE 1 REGISTER ...

Page 3

... TAP AC Switching Characteristics ............................... 16 3.3 V TAP AC Test Conditions ....................................... 17 3.3 V TAP AC Output Load Equivalent ......................... 17 2.5 V TAP AC Test Conditions ....................................... 17 2.5 V TAP AC Output Load Equivalent ......................... 17 Document Number: 38-05541 Rev. *J CY7C1361C/CY7C1363C TAP DC Electrical Characteristics and Operating Conditions ..................................................... 17 Identification Register Definitions ................................ 17 Scan Register Sizes ....................................................... 18 Identification Codes ....................................................... 18 119-ball BGA Boundary Scan Order ............................. 19 165-ball FBGA Boundary Scan Order ...

Page 4

... V V SSQ 10 SSQ DDQ 11 DDQ /DNU DDQ 20 DDQ SSQ 21 SSQ DQP SSQ 26 SSQ DDQ 27 DDQ DQP CY7C1361C/CY7C1363C 100 MHz Unit 8.5 ns 180 DDQ V 76 SSQ NC 75 DQP SSQ V 70 DDQ CY7C1363C (512 K × 18 DDQ V 60 SSQ SSQ V 54 DDQ Page [+] Feedback ...

Page 5

... DDQ V 21 SSQ SSQ V 27 DDQ DQP 30 D Document Number: 38-05541 Rev. *J CY7C1361C/CY7C1363C 80 DQP DDQ 4 DDQ SSQ 5 SSQ SSQ 10 SSQ DDQ 11 DDQ /DNU CY7C1363C (512 K × 18 DDQ 20 DDQ SSQ 21 SSQ DQP SSQ 26 SSQ DDQ 27 DDQ DQP DDQ 76 V SSQ DQP SSQ ...

Page 6

... V U DDQ Document Number: 38-05541 Rev. *J CY7C1361C (256 K × 36 ADSP ADSC DQP ADV CLK BWE DQP MODE NC/72M TMS TDI TCK TDO CY7C1363C (512 K × 18 ADSP ADSC ADV CLK BWE DQP MODE NC/36M A TMS TDI TCK TDO CY7C1361C/CY7C1363C DDQ A NC/512M A NC/1G ...

Page 7

... NC/72M A R MODE NC/36M A Document Number: 38-05541 Rev. *J Figure 4. 165-ball FBGA (3 Chip Enable) CY7C1361C (256 K × 36 BWE CLK NC/18M SS TDI A1 TDO A A0 TCK A TMS CY7C1363C (512 K × 18 BWE CLK NC/18M NC SS TDI A1 TDO TCK TMS CY7C1361C/CY7C1363C ADSC ADV A NC ADSP NC/576M ...

Page 8

... are also loaded into the burst counter. When ADSP and ADSC are both [1:0] are also loaded into the burst counter. When ADSP and ADSC are both [1:0] and DQP s is controlled CY7C1361C/CY7C1363C [ and CE are sampled and BWE ...

Page 9

... No connects. Not internally connected to the die. 18M, 36M, 72M, 144M, 288M, 576M, and 1G are address expansion pins and are not internally connected to the die. V /DNU Ground/DNU This pin can be connected to ground or should be left floating. SS Document Number: 38-05541 Rev. *J CY7C1361C/CY7C1363C Description . This pin is not available on TQFP packages through a pull DD . This pin is ...

Page 10

... Maximum access delay from the clock rise ( 6.5 ns (133 MHz device). CDV The CY7C1361C/CY7C1363C supports secondary cache in systems using either a linear or interleaved burst sequence. The interleaved burst order supports Pentium and i486™ processors. The linear burst sequence is suited for processors that use a linear burst sequence ...

Page 11

... ZZ recovery time ZZREC t ZZ active to sleep current ZZI t ZZ Inactive to exit sleep current RZZI Truth Table The Truth Table for CY7C1361C and CY7C1363C follows. Address Cycle Description Used Deselected cycle, power-down None Deselected cycle, power-down None Deselected cycle, power-down None ...

Page 12

... DQP D C Write bytes ( DQP , DQP , DQP D B Write all bytes Write all bytes Truth Table for Read/Write [10, 11] The Truth Table for Read/Write follows. Function (CY7C1363C) Read Read Write byte A – (DQ and DQP ) A A Write byte B – (DQ and DQP ) B B Write all bytes ...

Page 13

... IEEE 1149.1 Serial Boundary Scan (JTAG) The CY7C1361C/CY7C1363C incorporates a serial boundary scan test access port (TAP) in the BGA package only. The TQFP package does not offer this functionality. This part operates in accordance with IEEE Standard 1149.1-1900, but does not have the set of functions required for full 1149.1 compliance. These ...

Page 14

... Z state. SAMPLE/PRELOAD SAMPLE/PRELOAD is a 1149.1-mandatory instruction. When the SAMPLE/PRELOAD instructions are loaded into the instruction register and the TAP controller is in the Capture-DR state, a snapshot of data on the inputs and output pins is captured in the boundary scan register. CY7C1361C/CY7C1363C Page [+] Feedback ...

Page 15

... BYPASS instruction is that it shortens the boundary scan path when multiple devices are connected together on a board. Reserved These instructions are not implemented but are reserved for future use. Do not use these instructions TDIS t TDIH t TDOX DON’ UNDEFINED CY7C1361C/CY7C1363C TDOV Page [+] Feedback ...

Page 16

... CH Notes 12. t and t refer to the setup and hold time requirements of latching data from the boundary scan register 13. Test conditions are specified using the load in TAP AC test conditions. t Document Number: 38-05541 Rev. *J Parameter / ns CY7C1361C/CY7C1363C Min Max Unit 50 – ns – 20 MHz 20 – – ...

Page 17

... Defines memory type and architecture 000001 000001 Defines memory type and architecture 100110 010110 Defines width and density 00000110100 00000110100 Allows unique identification of SRAM vendor Indicates the presence register. CY7C1361C/CY7C1363C to 2 1.25V 50Ω 50Ω 20pF O Min Max Unit 2.4 – V 2.0 – ...

Page 18

... Do Not Use: This instruction is reserved for future use. RESERVED 110 Do Not Use: This instruction is reserved for future use. BYPASS 111 Places the bypass register between TDI and TDO. This operation does not affect SRAM operations. Document Number: 38-05541 Rev. *J CY7C1361C/CY7C1363C Bit Size (× 36) Bit Size (× 18 ...

Page 19

... Internal DQP Internal Document Number: 38-05541 Rev. *J CY7C1363C (512 K × 18) Signal Signal Bit # ball ID Name Name A0 1 CLK BWE ADSC ADSP MODE 7 G4 ADV DQP Internal Internal Internal Internal Internal Internal DQP Internal Internal Internal Internal Internal C DQP 26 Internal Internal Internal ...

Page 20

... DQ 25 Internal C DQP 26 Internal Internal Internal R11 R10 P10 P11 CY7C1361C/CY7C1363C CY7C1363C (512 K × 18) Signal Signal Bit # ball ID Name Name CLK BWE ADSC ADSP ADV 43 R1 MODE A 44 Internal Internal A 45 Internal Internal A 46 Internal Internal Internal 47 Internal Internal Internal 48 N1 ...

Page 21

... < V output disabled I DDQ, /2), undershoot: V (AC) > –2 V (Pulse width less than t CYC IL (min) within 200 ms. During this time V < V and CY7C1361C/CY7C1363C Test Description Typ Max* Unit Conditions Logical 25 °C 361 394 single-bit upsets Logical 25 °C 0 0.01 multi-bit upsets Single event 85 ° ...

Page 22

... R = 317  3 DDQ GND 351  INCLUDING JIG AND SCOPE ( 1667  2 DDQ GND 1538  INCLUDING JIG AND (b) SCOPE CY7C1361C/CY7C1363C Min Max – 250 – 180 – 110 – 150 – 40 – 100 – 120 – 40 – 60 119 BGA 165 FBGA ...

Page 23

... V. DDQ is the time that the power needs to be supplied above V and t is less than t to eliminate bus contention between SRAMs when sharing the same OELZ CHZ CLZ CY7C1361C/CY7C1363C –100 Unit Min Max – 1 – ms – 10 – ns – ...

Page 24

... ADVH ADVS ADV suspends burst t CDV t OELZ t DOH Q(A2 BURST READ DON’T CARE UNDEFINED is HIGH and CE is LOW. When CE is HIGH CY7C1361C/CY7C1363C Deselect Cycle t CHZ Q( Q(A2 Burst wraps around to its initial state is HIGH LOW HIGH Page [+] Feedback ...

Page 25

... ADSC extends burst WEH WES ADV suspends burst D(A2 BURST WRITE DON’T CARE UNDEFINED is HIGH and CE is LOW. When CE is HIGH LOW. X CY7C1361C/CY7C1363C t ADS t ADH A3 t WES t WEH t ADVS t ADVH D( D(A3 Extended BURST WRITE is HIGH LOW HIGH Page ...

Page 26

... Document Number: 38-05541 Rev. *J [28, 29, 30 WEH WES OELZ D(A3) t CDV Q(A4) Q(A4+1) Single WRITE BURST READ DON’T CARE UNDEFINED is HIGH and CE is LOW. When CE is HIGH CY7C1361C/CY7C1363C A5 A6 D(A5) D(A6) Q(A4+2) Q(A4+3) Back-to-Back WRITEs is HIGH LOW HIGH Page [+] Feedback ...

Page 27

... Device must be deselected when entering ZZ mode. See Cycle Descriptions table for all possible signal conditions to deselect the device. 32. DQs are in high Z when exiting ZZ sleep mode. Document Number: 38-05541 Rev. *J [31, 32] Figure 9. ZZ Mode Timing High-Z DON’T CARE CY7C1361C/CY7C1363C t ZZREC t RZZI DESELECT or READ Only Page [+] Feedback ...

Page 28

... Ordering Code Diagram 133 CY7C1361C-133AXC 51-85050 100-pin Thin Quad Flat Pack (14 × 20 × 1.4 mm) Pb-free CY7C1363C-133AXC CY7C1361C-133AJXC 51-85050 100-pin Thin Quad Flat Pack (14 × 20 × 1.4 mm) Pb-free CY7C1363C-133AJXC CY7C1361C-133AXI 51-85050 100-pin Thin Quad Flat Pack (14 × 20 × 1.4 mm) Pb-free 100 CY7C1361C-100AXC 51-85050 100-pin Thin Quad Flat Pack (14 × ...

Page 29

... Package Diagrams Figure 10. 100-pin TQFP (14 × 20 × 1.4 mm), 51-85050 Document Number: 38-05541 Rev. *J CY7C1361C/CY7C1363C 51-85050 *C Page [+] Feedback ...

Page 30

... Figure 11. 119-ball BGA (14 × 22 × 2.4 mm), 51-85115 Document Number: 38-05541 Rev. *J CY7C1361C/CY7C1363C 51-85115 *C Page [+] Feedback ...

Page 31

... Figure 12. 165-ball FPBGA (13 × 15 × 1.4 mm), 51-85180 Document Number: 38-05541 Rev. *J CY7C1361C/CY7C1363C 51-85180 *C Page [+] Feedback ...

Page 32

... TMS test mode select TDI test data-in TDO test data-out TQFP thin quad flat pack WE write enable TTL transistor–transistor logic Document Number: 38-05541 Rev. *J CY7C1361C/CY7C1363C Document Conventions Units of Measure Symbol Unit of Measure ns nano seconds V Volts µA micro Amperes mA milli Amperes ...

Page 33

... Document History Page Document Title: CY7C1361C/CY7C1363C 9-Mbit (256 K × 36/512 K × 18) Flow-through SRAM Document Number: 38-05541 Submission REV. ECN NO. Date ** 241690 See ECN *A 278969 See ECN *B 332059 See ECN *C 377095 See ECN *D 408298 See ECN *E 433033 See ECN *F 501793 See ECN ...

Page 34

... Cypress against all charges. Use may be limited by and subject to the applicable Cypress software license agreement. Document Number: 38-05541 Rev. *J All products and company names mentioned in this document may be the trademarks of their respective holders. cypress.com/go/plc Revised November 29, 2010 CY7C1361C/CY7C1363C PSoC Solutions psoc.cypress.com/solutions PSoC 1 | PSoC 3 ...

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