DS1225AD-200+ Maxim Integrated Products, DS1225AD-200+ Datasheet

IC NVSRAM 64KBIT 200NS 28DIP

DS1225AD-200+

Manufacturer Part Number
DS1225AD-200+
Description
IC NVSRAM 64KBIT 200NS 28DIP
Manufacturer
Maxim Integrated Products
Datasheet

Specifications of DS1225AD-200+

Format - Memory
RAM
Memory Type
NVSRAM (Non-Volatile SRAM)
Memory Size
64K (8K x 8)
Speed
200ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
28-DIP Module (600 mil), 28-EDIP
Data Bus Width
8 bit
Organization
8 K x 8
Interface Type
Parallel
Access Time
200 ns
Supply Voltage (max)
5.5 V
Supply Voltage (min)
4.5 V
Operating Current
75 mA
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
0 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
19-5625; Rev 11/10
FEATURES
 10 years minimum data retention in the
 Data is automatically protected during power
 Directly replaces 8k x 8 volatile static RAM
 Unlimited write cycles
 Low-power CMOS
 JEDEC standard 28-pin DIP package
 Read and write access times of 70 ns
 Lithium energy source is electrically
 Full ±10% V
 Optional ±5% V
 Optional industrial temperature range of
DESCRIPTION
The DS1225AB and DS1225AD are 65,536-bit, fully static, nonvolatile SRAMs organized as 8192 words
by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which
constantly monitors V
energy source is automatically switched on and write protection is unconditionally enabled to prevent
data corruption. The NV SRAMs can be used in place of existing 8k x 8 SRAMs directly conforming to
the popular bytewide 28-pin DIP standard. The devices also match the pinout of the 2764 EPROM and
the 2864 EEPROM, allowing direct substitution while enhancing performance. There is no limit on the
number of write cycles that can be executed and no additional support circuitry is required for
microprocessor interfacing.
www.maxim-ic.com
absence of external power
loss
or EEPROM
disconnected to retain freshness until power
is applied for the first time
(DS1225AB)
-40°C to +85°C, designated IND
CC
operating range (DS1225AD)
CC
operating range
CC
for an out-of-tolerance condition. When such a condition occurs, the lithium
1 of 10
PIN ASSIGNMENT
PIN DESCRIPTION
A0-A12
DQ0-DQ7
V
GND
NC
CE
WE
OE
CC
28-Pin ENCAPSULATED PACKAGE
64k Nonvolatile SRAM
GND
DQ0
DQ1
DQ2
A12
A7
A6
A5
A4
A3
A2
A1
A0
NC
720-mil EXTENDED
1
2
3
4
5
6
7
8
9
10
11
12
13
14
- Address Inputs
- Data In/Data Out
- Chip Enable
- Write Enable
- Output Enable
- Power (+5V)
- Ground
- No Connect
DS1225AB/AD
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
WE
NC
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3

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DS1225AD-200+ Summary of contents

Page 1

... Optional industrial temperature range of -40°C to +85°C, designated IND DESCRIPTION The DS1225AB and DS1225AD are 65,536-bit, fully static, nonvolatile SRAMs organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors V for an out-of-tolerance condition. When such a condition occurs, the lithium ...

Page 2

... READ MODE The DS1225AB and DS1225AD execute a read cycle whenever WE (Write Enable) is inactive (high) and CE (Chip Enable) and OE (Output Enable) are active (low). The unique address specified by the 13 address inputs ( defines which of the 8192 bytes of data accessed. Valid data will available to the eight data output drivers within t stable, providing that CE and OE access times are also satisfied ...

Page 3

... Operating Current (Industrial) Write Protection Voltage (DS1225AB) Write Protection Voltage (DS1225AD) CAPACITANCE PARAMETER Input Capacitance Input/Output Capacitance SYMBOL MIN TYP V 4.75 5 4. =5V ± 10% for DS1225AD) CC SYMBOL MIN TYP 5.0 CCS1 I 3.0 CCS2 I CC01 I CC01 V 4.50 4. ...

Page 4

... Output High Z from WE Output Active from WE Data Setup Time Data Hold Time (V (V DS1225AB-70 SYMBOL DS1225AD-70 MIN ACC COE WR1 t 10 WR2 t ODW 5 t OEW DH1 t 10 DH2 DS1225AB/ See Note 10) A =5V ± 5% for DS1225AB) CC =5V ± 10% for DS1225AD) CC UNITS NOTES MAX ...

Page 5

READ CYCLE SEE NOTE 1 WRITE CYCLE 1 SEE NOTES AND 12 WRITE CYCLE 2 SEE NOTES AND DS1225AB/AD ...

Page 6

POWER-DOWN/POWER-UP CONDITION SEE NOTE 11 POWER-DOWN/POWER-UP TIMING PARAMETER V Fail Detect to and slew from slew from Valid to and Inactive ...

Page 7

... low or the WE low transition occurs prior to or simultaneously with the CE low transition, the output buffers remain in a high-impedance state during this period. 9. Each DS1225AB and each DS1225AD has a built-in switch that disconnects the lithium source until V is first applied by the user. The expected t ...

Page 8

... DS1225AB-70IND+ -40°C to +85°C DS1225AD-70+ 0°C to +70°C DS1225AD-70IND+ -40°C to +85°C +Denotes a lead(Pb)-free/RoHS-compliant package. PACKAGE INFORMATION For the latest package outline information and land patterns www.maxim-ic.com/packages. “#”, or “-” in the package code indicates RoHS status only. Package drawings may show a different suffix character, but the drawing pertains to the package regardless of RoHS status ...

Page 9

REVISION HISTORY REVISION DATE Added package information table; removed the DIP module package 121907 drawing and dimension table Updated the storage information, soldering temperature, and lead temperature information in the Absolute Maximum Ratings section; removed the -85, -150, and -200 ...

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