STPSC8H065D STMicroelectronics, STPSC8H065D Datasheet

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STPSC8H065D

Manufacturer Part Number
STPSC8H065D
Description
Schottky Diodes & Rectifiers 650 V 8A Schottky silicn carbid TO-220
Manufacturer
STMicroelectronics
Datasheet

Specifications of STPSC8H065D

Rohs
yes
Product
Schottky Silicon Carbide Diodes
Peak Reverse Voltage
650 V
Forward Continuous Current
8 A
Max Surge Current
75 A
Configuration
Single
Forward Voltage Drop
1.75 V
Maximum Reverse Leakage Current
0.08 mA
Operating Temperature Range
- 40 C to + 175 C
Mounting Style
Through Hole
Package / Case
TO-220
Maximum Diode Capacitance
414 pF

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Features
Description
The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide bandgap material
allows the design of a Schottky diode structure
with a 650 V rating. Due to the Schottky
construction, no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
Especially suited for use in PFC applications, this
ST SiC diode will boost the performance in hard
switching conditions. Its high forward surge
capability ensures a good robustness during
transient phases.
October 2012
This is information on a product in full production.
No or negligible reverse recovery
Switching behavior independent of
temperature
High forward surge capability
650 V power Schottky silicon carbide diode
Doc ID 023603 Rev 2
Table 1.
K
STPSC8H065D
TO-220AC
Symbol
T
V
I
j
F(AV)
(max)
RRM
Device summary
K
STPSC8H065B-TR
A
A
K
STPSC8H065
Datasheet
DPAK
NC
STPSC8H065G-TR
A
K
K
D
175 °C
production data
Value
650 V
2
PAK
8 A
NC
A
www.st.com
1/9
9

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STPSC8H065D Summary of contents

Page 1

... ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases. October 2012 This is information on a product in full production. 650 V power Schottky silicon carbide diode K TO-220AC STPSC8H065D Table 1. Symbol I F(AV) V RRM T (max) ...

Page 2

Characteristics 1 Characteristics Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified) Symbol V Repetitive peak reverse voltage RRM I Forward rms current F(RMS) I Average forward current F(AV) Surge non repetitive forward I FSM current I ...

Page 3

STPSC8H065 Figure 1. Forward voltage drop versus forward current (typical values, low level) 16 Pulse test : t =380µ =25 ° 0.0 0.5 1.0 1.5 2.0 Figure 3. Reverse ...

Page 4

Characteristics Figure 7. Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform) I (A) FSM 1.E+03 T =25 ° =125 °C a 1.E+02 1.E+01 1.E-05 1.E-04 4/9 Figure (nC ...

Page 5

STPSC8H065 2 Package information ● Epoxy meets UL94, V0 ● Recommended torque value (TO-220AC): 0.4 to 0.6 N·m ● Cooling method: conduction (C) In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, ...

Page 6

Package information Table 7. DPAK dimensions 0.60 MIN. Figure 9. Footprint (dimensions in mm) 6/9 Ref 6.7 3 6.7 Doc ID 023603 Rev 2 ...

Page 7

STPSC8H065 2 Table 8. D PAK dimensions Figure 10. Footprint (dimensions in mm) Ref FLAT ZONE NO LESS THAN 2mm 16.90 10.30 ...

Page 8

... Ordering information Table 9. Ordering information Order code STPSC8H065D STPSC8H065G-TR STPSC8H065B-TR 4 Revision history Table 10. Document revision history Date 31-Aug-2012 10-Oct-2012 8/9 Marking Package STPSC8H065D TO-220AC 2 STPSC8H065G D PAK STPSC 8H065 DPAK Revision 1 First issue. 2 Added Max. value to Doc ID 023603 Rev 2 STPSC8H065 Weight Base qty Delivery mode 1 ...

Page 9

... STPSC8H065 Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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