STPS3045CGY-TR STMicroelectronics, STPS3045CGY-TR Datasheet - Page 2

• Manufacturer Part Number: STPS3045CGY-TR
• Description: Schottky Diodes & Rectifiers Auto pwr Schottky 2x15A 45V 0.57VF
• Manufacturer: STMicroelectronics

Specifications of STPS3045CGY-TR

• Rohs: yes

1
2/7
Characteristics
Table 2.
1.
Table 3.
When the diodes 1 and 2 are used simultaneously :
Δ
Table 4.
1. Pulse test: t
To evaluate the conduction losses use the following equation:
P = 0.42 x I
Symbol
T
Symbol
V
I
I
V
F(RMS)
j
I
P
dV/dt
R
dPtot
---------------
(diode 1) = P(diode1) x R
I
F
F(AV)
T
FSM
dTj
ARM
Symbol
RRM
T
R
(1)
stg
(1)
R
j
th (j-c)
th (c)
<
------------------------- -
Rth j a
Reverse leakage current
Forward voltage drop
F(AV)
(
Repetitive peak reverse voltage
Forward rms voltage
Average forward current δ = 0.5
Surge non repetitive forward current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature
Critical rate of rise reverse voltage
1
p
Absolute ratings (limiting values, per diode)
Thermal resistance parameters
Static electrical characteristics (per diode)
–
= 380 µs, δ < 2%
)
condition to avoid thermal runaway for a diode on its own heatsink
+ 0.01 I
Junction to case
Coupling
Parameter
F
2
(RMS)
th(j-c)
Doc ID 17264 Rev 1
(Per diode) + P(diode 2) x R
T
T
T
T
T
j
j
j
j
j
Parameter
= 25 °C
= 125 °C
= 125 °C
= 25 °C
= 125 °C
Parameter
Tests conditions
T
t
t
p
p
V
I
I
F
F
C
(1)
R
= 10 ms sinusoidal
= 1 µs T
= 15 A
= 30 A
= 155 °C
= V
RRM
Per diode
Total
j
= 25 °C
Per diode
Per device
th(c)
Min.
-
-
-
-
-
Typ.
0.65
0.5
11
-65 to +175
-40 to +175
Value
-
-
1.60
0.85
0.10
10000
Value
6000
220
45
30
10
30
Max.
0.72
0.57
0.84
200
40
° C/W
° C/W
Unit
V/µs
Unit
Unit
mA
W
µA
°C
°C
V
A
A
A
V