STPS3045CGY-TR STMicroelectronics, STPS3045CGY-TR Datasheet - Page 3

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STPS3045CGY-TR

Manufacturer Part Number
STPS3045CGY-TR
Description
Schottky Diodes & Rectifiers Auto pwr Schottky 2x15A 45V 0.57VF
Manufacturer
STMicroelectronics
Datasheet

Specifications of STPS3045CGY-TR

Rohs
yes

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0
Figure 1.
Figure 3.
Figure 5.
0.001
12
11
10
0.01
200
180
160
140
120
100
9
8
7
6
5
4
3
2
1
0
0.1
80
60
40
20
1.E-03
0
1
0.01
0
P
I (A)
P
F(AV)
M
P
ARM
ARM p
I
M
2
(W)
(1µs)
(t )
δ
=0.5
t
δ = 0.05
Average forward power dissipation
versus average forward current
(per diode)
Normalized avalanche power
derating versus pulse duration
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
0.1
4
6
1.E-02
δ = 0.1
8
1
I
F(AV)
t (µs)
δ = 0.2
p
t(s)
10
(A)
12
10
1.E-01
δ = 0.5
14
100
δ
16
=tp/T
δ = 1
T =100°C
T =125°C
T =75°C
C
Doc ID 17264 Rev 1
C
T
18
C
1.E+00
tp
1000
20
Figure 2.
Figure 4.
Figure 6.
18
16
14
12
10
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.2
0.8
0.6
0.4
0.2
8
6
4
2
0
1.E-03
1
0
0
I
25
F(AV)
Z
P
Single pulse
th(j-c)
δ = 0.5
δ = 0.2
δ = 0.1
δ
ARM
P
=tp/T
ARM
(A)
(25°C)
/R
25
T
(T )
th(j-c)
j
Average forward current versus
ambient temperature
(δ = 0.5, per diode)
Normalized avalanche power
derating versus junction
temperature
Relative variation of thermal
impedance junction to ambient
versus pulse duration
50
tp
50
1.E-02
R
th(j-a)
=15°C/W
75
T
75
amb
T (°C)
t (s)
j
p
(°C)
100
100
1.E-01
125
δ
=tp/T
125
150
T
tp
1.E+00
150
175
3/7

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