VS-MBR4045CTPBF Vishay Semiconductors, VS-MBR4045CTPBF Datasheet

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VS-MBR4045CTPBF

Manufacturer Part Number
VS-MBR4045CTPBF
Description
Schottky Diodes & Rectifiers 40 Amp 45 Volt Common Cathode
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of VS-MBR4045CTPBF

Product Category
Schottky Diodes & Rectifiers
Rohs
yes
Product
Schottky Rectifiers
Peak Reverse Voltage
45 V
Forward Continuous Current
40 A
Max Surge Current
900 A
Configuration
Dual Common Cathode
Forward Voltage Drop
0.78 V
Maximum Reverse Leakage Current
1000 uA
Operating Temperature Range
- 65 C to + 150 C
Mounting Style
Through Hole
Package / Case
TO-220AB
Factory Pack Quantity
50
Revision: 30-Aug-11
PRODUCT SUMMARY
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
V
I
I
V
T
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
Peak repetitive forward current per leg
Maximum peak one cycle non-repetitive
surge current per leg
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
F(AV)
FRM
FSM
J
RRM
F
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
Diode variation
TO-220AB
Package
I
T
RM
V
J
I
F
F(AV)
E
V
max.
at I
max.
AS
R
www.vishay.com
F
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
per device
Rectangular waveform (per device)
T
t
20 A
Range
p
C
Anode
= 5 μs sine
per leg
= 118 °C (per leg)
Common cathode
pk
95 mA at 125 °C
Schottky Rectifier, 2 x 20 A
common
cathode
, T
Base
TO-220AB
1
J
2 x 20 A
CHARACTERISTICS
150 °C
0.58 V
20 mJ
= 125 °C
Common
SYMBOL
cathode
45 V
I
I
I
E
F(AV)
2
2
FRM
FSM
I
AR
AS
SYMBOL
V
VS-MBR4045CTPbF, VS-MBR4045CT-N3
3
RWM
V
Anode
R
T
Rated V
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
T
Current decaying linearly to zero in 1 μs
Frequency limited by T
C
J
= 25 °C, I
= 118 °C, rated V
R
, square wave, 20 kHz, T
1
VS-MBR4045CTPbF
AS
FEATURES
• 150 °C T
• Low forward voltage drop
• High frequency operation
• High
• Guard ring for enhanced ruggedness and long
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
DESCRIPTION
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
= 3 A, L = 4.40 mH
encapsulation
strength and moisture resistance
term reliability
(-N3 only)
TEST CONDITIONS
R
45
J
maximum V
purity,
J
www.vishay.com/doc?91000
operation
- 65 to 150
Following any rated
load condition and with
rated V
C
VALUES
= 118 °C
A
for
0.58
VS-MBR4045CT-N3
900
high
40
45
40
= 1.5 x V
Vishay Semiconductors
RRM
enhanced
applied
45
temperature
R
DiodesEurope@vishay.com
typical
Document Number: 94294
mechanical
VALUES
900
210
20
40
40
20
3
epoxy
UNITS
UNITS
°C
A
V
A
V
V
UNITS
mJ
A
A

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VS-MBR4045CTPBF Summary of contents

Page 1

... Repetitive avalanche current per leg Revision: 30-Aug-11 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT VS-MBR4045CTPbF, VS-MBR4045CT-N3 FEATURES 2 • 150 °C T operation J • ...

Page 2

... Mounting torque maximum Marking device Revision: 30-Aug-11 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT VS-MBR4045CTPbF, VS-MBR4045CT-N3 SYMBOL TEST CONDITIONS ...

Page 3

... Fig Maximum Thermal Impedance Z Revision: 30-Aug-11 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT VS-MBR4045CTPbF, VS-MBR4045CT-N3 1000 100 150 °C ...

Page 4

... Inverse power loss = D); I REV R1 R Revision: 30-Aug-11 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT VS-MBR4045CTPbF, VS-MBR4045CT- ...

Page 5

... Dimensions Part marking information SPICE model Revision: 30-Aug-11 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT VS-MBR4045CTPbF, VS-MBR4045CT-N3 MBR PbF ...

Page 6

... Dimensions define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC TO-220, except A2 (maximum) and D2 (minimum) where dimensions are derived from the actual package outline Outline Dimensions Vishay Semiconductors Thermal pad ( ...

Page 7

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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