VS-HFA08TB120STRRP Vishay Semiconductors, VS-HFA08TB120STRRP Datasheet
VS-HFA08TB120STRRP
Specifications of VS-HFA08TB120STRRP
Related parts for VS-HFA08TB120STRRP
VS-HFA08TB120STRRP Summary of contents
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... Reduced power loss in diode and switching transistor • Higher frequency operation • Reduced snubbing • Reduced parts count DESCRIPTION VS-HFA08TB120S is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance 2 PAK) which is unsurpassed by any rectifier previously available ...
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... J dI /dt = 200 A/μs ° 200 125 °C J /dt1 °C J /dt2 T = 125 °C J TEST CONDITIONS 0.063" from case (1.6 mm) for 10 s Typical socket mount 2 Case style D PAK 2 VS-HFA08TB120SPbF Vishay Semiconductors MIN. TYP. MAX. 1200 - - - 2.6 3.3 - 3.4 4.3 - 2.4 3 135 1000 - 8.0 - MIN ...
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... For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 1000 100 10 0.1 0. 94046_02 Fig Typical Values of Reverse Current vs. Reverse Voltage 100 ° 100 1000 ...
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... V = 160 125 °C 140 °C J 120 100 100 dI /dt (A/μs) 94046_05 F Fig Typical Reverse Recovery Time vs 160 125 ° ° 100 dI /dt (A/µs) 94046_06 F Fig ...
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... F ( area under curve defined and I RRM (5) dI /dt - peak rate of change of (rec)M current during t to point where a line passing and 0.50 I RRM RRM Fig Reverse Recovery Waveform and Definitions 5 VS-HFA08TB120SPbF Vishay Semiconductors ( 0.5 I RRM (5) dI /dt (rec)M RRM RRM ...
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... Packaging information ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER TUBE VS-HFA08TB120SPBF VS-HFA08TB120STRRP VS-HFA08TB120STRLP Revision: 27-Aug-12 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...
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... E 9.65 0.039 E1 7.90 0.035 4 e 0.070 H 14.61 0.068 4 L 1.78 0.029 L1 0.023 4 L2 1.27 0.065 L3 0.380 2 L4 4.78 DiodesEurope@vishay.com This document is subject to change without notice. Outline Dimensions Vishay Semiconductors Pad layout 11.00 MIN. (0.43) 9.65 MIN. (0.38) (D1) (3) 17.90 (0.70) 15.00 (0.625) 3.81 MIN. (0.15) 2.32 MIN. (0.08) 2.64 (0.103) (3) 2.41 (0.096) Base Plating (4) Metal b1, b3 (4) ( Seating ...
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ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...