FST7360M GeneSiC Semiconductor, FST7360M Datasheet

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FST7360M

Manufacturer Part Number
FST7360M
Description
Schottky Diodes & Rectifiers Schottky Rectifier - 60 V - 70 A - D61-3SM
Manufacturer
GeneSiC Semiconductor
Datasheet

Specifications of FST7360M

Product
Schottky Diodes
Peak Reverse Voltage
60 V
Forward Continuous Current
70 A
Max Surge Current
800 A
Forward Voltage Drop
0.8 V
Maximum Reverse Leakage Current
1 uA
Operating Temperature Range
- 40 C to + 175 C
Mounting Style
Through Hole
Package / Case
D61-3M
www.genesicsemi.com
Features
• High Surge Capability
• Types up to 100V V
Maximum ratings, at T
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Thermal characteristics
Thermal resistance, junction -
case
Silicon Power
Schottky Diode
p
Parameter
p
RRM
j
= 25 °C, unless otherwise specified
g
Symbol
Symbol
V
V
R
I
V
T
F,SM
V
RRM
RMS
I
T
I
thJC
DC
stg
F
R
F
j
T
V
V
C
I
R
F
R
= 25 °C, t
= 20 V, T
= 70 A, T
= 20 V, T
Conditions
T
Conditions
C
≤ 100 °C
p
j
j
j
= 125 °C
= 25 °C
= 8.3 ms
= 25 °C
1
FST7345M FST7360M
FST7345M FST7360M
-40 to 175 -40 to 175
-40 to 175 -40 to 175
FST7345M thru FST73100M
0.55
600
500
1.2
45
32
45
70
5
0.75
600
500
1.2
60
42
60
70
5
D61-3M Package
FST7380M
FST7380M
-40 to 175
-40 to 175
0.84
600
500
1.2
80
56
80
70
5
V
I
F
RRM
= 70 A
FST73100M
FST73100M
= 20 V - 100 V
-40 to 175
-40 to 175
0.84
100
100
600
500
1.2
80
70
5
°C/W
Unit
Unit
mA
°C
°C
V
V
V
A
A
V

Related parts for FST7360M

FST7360M Summary of contents

Page 1

... DC T ≤ 100 ° ° 8 -40 to 175 -40 to 175 j T -40 to 175 -40 to 175 stg Symbol Conditions FST7345M FST7360M ° ° 125 ° thJC ...

Page 2

FST7345M thru FST73100M 2 ...

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