SRP300C-E3/51 Vishay Semiconductors, SRP300C-E3/51 Datasheet - Page 2

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SRP300C-E3/51

Manufacturer Part Number
SRP300C-E3/51
Description
Rectifiers 150 Volt 3.0A 100ns
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of SRP300C-E3/51

Product Category
Rectifiers
Rohs
yes
Product
Fast Recovery Rectifiers
Mounting Style
Through Hole
Package / Case
DO-201AD
Factory Pack Quantity
1500
SRP300A thru SRP300K
Vishay General Semiconductor
Note
(1)
RATINGS AND CHARACTERISTICS CURVES
(T
www.vishay.com
2
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Maximum
instantaneous forward
voltage
Maximum DC reverse
current at rated DC
blocking voltage
Maximum reverse
recovery time
Typical junction
capacitance
THERMAL CHARACTERISTICS (T
PARAMETER
Typical thermal resistance
ORDERING INFORMATION (Example)
PREFERRED P/N
SRP300J-E3/54
SRP300J-E3/73
A
Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length with both leads equally heat sink
= 25 °C unless otherwise noted)
4.0
3.0
2.0
1.0
0
0
I
I
AV
Fig. 1 - Forward Current Derating Curves
pk
= π
20
Capacitive
I
I
pk
AV
Ambient Temperature (°C)
Loads
40
=
5.0
10
20
UNIT WEIGHT (g)
3.0 A
I
I
4.0 V, 1 MHz
TEST CONDITIONS
F
rr
60
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
= 0.5 A, I
= 0.25 A
For technical questions within your region, please contact one of the following:
1.1
1.1
(20 mm x 20 mm x 1 mm)
80
T
T
0.8" x 0.8" x 0.04"
Copper Heatsinks
A
A
R
= 25 °C
= 100 °C
= 1.0 A,
100
0.375" (9.5 mm)
Lead Length
120
PREFERRED PACKAGE CODE
A
= 25 °C unless otherwise noted)
SYMBOL SRP300A SRP300B SRP300D SRP300G SRP300J SRP300K UNIT
SYMBOL SRP300A SRP300B SRP300D SRP300G SRP300J SRP300K UNIT
A
R
140
= 25 °C unless otherwise noted)
θJA
C
V
I
t
R
rr
F
J
(1)
54
73
100
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
200
1000
100
10
BASE QUANTITY
1
DiodesEurope@vishay.com
1400
1000
Number of Cycles at 60 Hz
150
1.3
10
28
22
300
13" diameter paper tape and reel
8.3 ms Single Half Sine-Wave
10
T
A
= 55 °C
Ammo pack packaging
DELIVERY MODE
400
Document Number: 88744
200
Revision: 27-Oct-09
500
100
°C/W
μA
pF
ns
V

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