FDMS8570SDC Fairchild Semiconductor, FDMS8570SDC Datasheet
FDMS8570SDC
Specifications of FDMS8570SDC
Related parts for FDMS8570SDC
FDMS8570SDC Summary of contents
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... Thermal Resistance, Junction to Ambient θJA R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device 10DC FDMS8570SDC ©2012 Fairchild Semiconductor Corporation FDMS8570SDC Rev.C ® TM SyncFET General Description This N-Channel SyncFET Semiconductor’ Advancements in both silicon and package technologies have = 25 A ...
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... Gate to Drain “Miller” Charge gd Drain-Source Diode Characteristics V Source to Drain Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr ©2012 Fairchild Semiconductor Corporation FDMS8570SDC Rev °C unless otherwise noted J Test Conditions mA mA, referenced to 25 °C D ...
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... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. ° based on starting 0.4 mH ©2012 Fairchild Semiconductor Corporation FDMS8570SDC Rev.C (Bottom Drain °C/W when mounted pad copper 2 pad copper 2 pad copper ...
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... PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 1.0 1.5 2 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2012 Fairchild Semiconductor Corporation FDMS8570SDC Rev °C unless otherwise noted 2 μ s 0.9 1.2 1 100 125 150 ...
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... MAX RATED 0 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2012 Fairchild Semiconductor Corporation FDMS8570SDC Rev °C unless otherwise noted J 10000 100 100 ...
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... Typical Characteristics 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 0.0001 - Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDMS8570SDC Rev °C unless otherwise noted J SINGLE PULSE C/W θ RECTANGULAR PULSE DURATION ( ...
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... SyncFET Schottky body diode Characteristics TM Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverse recovery characteristic of the FDMS8570SDC ...
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... Dimensional Outline and Pad Layout (0.90) PKG (3.30 (0.82) PIN #1 IDENT MAY APPEAR AS OPTIONAL 1.27 (0.34) 0.71 0.44 CHAMFER CO RNER AS PIN #1 IDENT MAY APPEAR AS OPTIONAL 0.10 C 0.08 C 1.05 0.95 ©2012 Fairchild Semiconductor Corporation FDMS8570SDC Rev.C 5.10 4.90 A (2.60) PKG 4.52 3.75 6.25 5.90 1. TOP VIEW SEE 1.27 DETAIL A FRONT VIEW O PTIONAL DRAFT ANGLE 3.81 MAY APPEAR ON FOUR SIDES OF THE PACKAGE 0 ...
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... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2012 Fairchild Semiconductor Corporation FDMS8570SDC Rev.C ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ™ ...