GB100XCP12-227 GeneSiC Semiconductor, GB100XCP12-227 Datasheet

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GB100XCP12-227

Manufacturer Part Number
GB100XCP12-227
Description
IGBT Modules 1200V 100A SIC IGBT CoPak
Manufacturer
GeneSiC Semiconductor
Datasheet

Specifications of GB100XCP12-227

Rohs
yes
Product
IGBT Silicon Modules
Configuration
IGBT-Inverter
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
1.9 V
Gate-emitter Leakage Current
- 400 nA
Maximum Operating Temperature
+ 175 C
Package / Case
SOT-227
Maximum Gate Emitter Voltage
20 V
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
IGBT/SiC Diode Co-pack
Features
 Optimal Punch Through (OPT) technology
 SiC freewheeling diode
 Positive temperature coefficient for easy paralleling
 Extremely fast switching speeds
 Temperature independent switching behavior of SiC rectifier
 Best RBSOA/SCSOA capability in the industry
 High junction temperature
 Industry standard packaging
Advantages
 Industry's highest switching speeds
 High temperature operation
 Improved circuit efficiency
 Low switching losses
Maximum Ratings at T
IGBT
Collector-Emitter Voltage
DC-Collector Current
Peak Collector Current
Gate Emitter Peak Voltage
IGBT Short Circuit SOA
Operating Temperature
Storage Temperature
Isolation Voltage
Free-wheeling Silicon Carbide diode
DC-Forward Current
Non Repetitive Peak Forward Current
Surge Non Repetitive Forward Current
Thermal Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - case
Mechanical Properties
Mounting Torque
Terminal Connection Torque
Weight
Case Color
Dimensions
Feb 2012
 
Parameter
j
= 175 °C, unless otherwise specified
 
http://www.genesicsemi.com/index.php/sic-products/copack
Symbol
V
V
V
R
R
I
T
I
t
I
F,SM
M
T
I
CM
psc
ISOL
CES
GES
I
FM
thJC
thJC
C
stg
F
vj
d
t P = 10 ms, half sine, T
I
V
SOL
CC
V
T
< 1 mA, 50/60 Hz, t = 1 s
GE
= 900 V, V
C
Limited by T
= 25 ºC, t P = 10 μs
≤ 15 V, Tv
Package
 RoHS Compliant
Applications
 Solar Inverters
 Aerospace Actuators
 Server Power Supplies
 Resonant Inverters > 100 kHz
 Inductive Heating
 Electronic Welders
Conditions
                 
T
T
SiC Diode
C
C
IGBT
≤ 130 °C
≤ 130 ºC
CEM
j
3
≤ 125 ºC
vjmax
≤ 1200 V
SOT – 227
C
= 25 ºC
3
1
min.
2
1.3
38 x 25.4 x 12
GB100XCP12-227
-40 to +175
-40 to +175
Values
Values
V
I
V
Black
CM
1200
3000
0.08
0.53
± 20
typ.
100
200
100
CES
CE(SAT)
1.5
tbd
tbd
29
10
1
max.
1.5
=
=
=
1200 V
100 A
1.9 V
2
3
°C/W
°C/W
Unit
Nm
Nm
mm
°C
°C
μs
V
A
A
V
V
A
A
A
g
Pg1 of 6
 

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GB100XCP12-227 Summary of contents

Page 1

... SOL I T ≤ 130 º º μ ms, half sine F,SM R IGBT thJC R SiC Diode thJC M d http://www.genesicsemi.com/index.php/sic-products/copack GB100XCP12-227 V = CES CE(SAT SOT – 227 Values 1200 100 200 vjmax ± 20 ≤ 1200 V ...

Page 2

... E S off 800 gon goff VGE(on 0.8 µH, T off http://www.genesicsemi.com/index.php/sic-products/copack GB100XCP12-227 Values min. typ. max º ºC CES j 3. 175 ºC CES j -400 400 = 175 ºC j 1.1 7 º ...

Page 3

... Figure 1: Typical Output Characteristics at 25 °C Figure 3: Typical Transfer Characteristics Figure 5: Typical FWD Forward Characteristics Feb 2012   Figure 2: Typical Output Characteristics at 175 °C Figure 4: Typical Blocking Characteristics Figure 6: Typical Turn On Gate Charge http://www.genesicsemi.com/index.php/sic-products/copack GB100XCP12-227   Pg3 of 6 ...

Page 4

... Figure 11: Typical Module Energy Losses and Switching Times at IGBT Turn On vs. Temperature Feb 2012   Figure 8: Typical Hard-Switched IGBT Turn Off Figure 10: Typical Hard-Switched Free-wheeling SiC Diode Figure 12: Typical Module Energy Losses and Switching http://www.genesicsemi.com/index.php/sic-products/copack GB100XCP12-227 Waveforms Turn On Waveforms Times at IGBT Turn Off vs. Temperature   Pg4 of 6 ...

Page 5

... Figure 13: Typical Module Energy Losses and Switching Times at IGBT Turn On vs. Current Figure 15: Typical Hard-Switched Reverse Recovery Charge vs. Temperature Feb 2012   Figure 14: Typical Module Energy Losses and Switching Figure 16: Typical C-V Characteristics http://www.genesicsemi.com/index.php/sic-products/copack GB100XCP12-227 Times at IGBT Turn Off vs. Current   Pg5 of 6 ...

Page 6

... Feb 2012   PACKAGE OUTLINE Revision History Revision 2 Updated Electrical Characteristics 1 Second generation release 0 http://www.genesicsemi.com/index.php/sic-products/copack GB100XCP12-227 Comments Supersedes GA100XCP12-227 Initial release   Pg6 of 6 ...

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