IXXN110N65C4H1 Ixys, IXXN110N65C4H1 Datasheet

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IXXN110N65C4H1

Manufacturer Part Number
IXXN110N65C4H1
Description
IGBT Modules 650V/234A Trench IGBT GenX4 XPT
Manufacturer
Ixys
Datasheet

Specifications of IXXN110N65C4H1

Rohs
yes
Product
IGBT Silicon Modules
Configuration
Single Dual Emitter
Collector- Emitter Voltage Vceo Max
650 V
Collector-emitter Saturation Voltage
1.98 V
Continuous Collector Current At 25 C
210 A
Gate-emitter Leakage Current
100 nA
Power Dissipation
750 W
Maximum Operating Temperature
+ 175 C
Package / Case
SOT-227B-4
Maximum Gate Emitter Voltage
20 V
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
XPT
w/ Sonic Diode
Extreme Light Punch Through
IGBT for 20-60kHz Switching
Symbol
V
V
V
V
I
I
I
I
I
SSOA
(RBSOA)
t
(SCSOA)
P
T
T
T
V
M
Weight
Symbol
(T
BV
V
I
I
V
© 2012 IXYS CORPORATION, All Rights Reserved
C25
C25
C110
F110
CM
CES
GES
sc
J
JM
stg
CES
CGR
GES
GEM
C
ISOL
GE(th)
CE(sat)
d
J
CES
= 25°C, Unless Otherwise Specified)
TM
650V GenX4
Terminal Connection Torque
Clamped Inductive Load
T
T
Continuous
Transient
T
Terminal Current Limit
T
T
V
V
R
T
50/60Hz
I
Mounting Torque
Test Conditions
Test Conditions
I
V
V
I
T
I
ISOL
C
C
C
J
J
C
C
C
C
C
GE
GE
CE
CE
G
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C (Chip Capability)
= 110°C
= 110°C
= 25°C, 1ms
= 82Ω, Non Repetitive
= 25°C
= 15V, T
= 15V, V
≤ 1mA
= 250μA, V
= V
= 0V, V
= 110A, V
= 250μA, V
CES
, V
GE
VJ
CE
GE
= ±20V
GE
= 150°C, R
= 360V, T
= 0V
CE
GE
= 15V, Note 1
= 0V
= V
t = 1min
t = 1s
GE
GE
J
= 1MΩ
TM
G
= 150°C
Preliminary Technical Information
= 2Ω
T
T
J
J
= 150°C
= 150°C
IXXN110N65C4H1
Min.
650
4.0
Characteristic Values
@V
-55 ... +175
-55 ... +175
Maximum Ratings
CE
I
CM
1.3/11.5
1.5/13
1.98
2.34
Typ.
= 220
2500
3000
V
±20
±30
110
470
210
750
175
650
650
200
CES
70
10
30
E
Max.
±100
2.35
Nm/lb.in.
Nm/lb.in.
6.5
50
3 mA
V~
V~
μA
nA
°C
°C
°C
μs
W
V
V
V
V
V
A
A
A
A
A
A
V
V
V
g
V
I
V
t
SOT-227B, miniBLOC
G = Gate, C = Collector, E = Emitter
Features
Advantages
Applications
C110
Isolation
fi(typ)
International Standard Package
miniBLOC, with Aluminium Nitride
2500V~
Anti-Parallel Sonic Diode
Optimized for 20-60kHz Switching
Square RBSOA
Short Circuit Capability
High Current Handling Capability
High Power Density
Low Gate Drive Requirement
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
High Frequency Power Inverters
CES
CE(sat)
Main or Kelvin Emitter
either emitter terminal can be used as
E153432
Isolation Voltage
= 650V
= 110A
= 30ns
≤ ≤ ≤ ≤ ≤ 2.35V
G
E
DS100506A(02/13)
C
E

Related parts for IXXN110N65C4H1

IXXN110N65C4H1 Summary of contents

Page 1

... CES CE CES GE = ±20V 0V, V GES 110A 15V, Note 1 CE(sat © 2012 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information IXXN110N65C4H1 TM Maximum Ratings 650 = 1MΩ 650 GE ±20 ±30 210 200 110 70 470 = 2Ω 220 G CM ≤ CES = 150° ...

Page 2

... Characteristic Values Min. Typ. 1 150°C 1 150° 300V 100 (clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXXN110N65C4H1 SOT-227B miniBLOC (IXXN) Max 1. 0.20 °C/W °C/W Max. 2 ...

Page 3

... T = 25º 220A 110A 55A IXXN110N65C4H1 Fig. 2. Extended Output Characteristics @ 15V GE 14V 13V 12V 11V 10V Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V 220A C ...

Page 4

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 150ºC 120 140 160 180 200 240 200 C ies 160 120 C oes C res Fig. 11. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXXN110N65C4H1 Fig. 8. Gate Charge 325V 110A 10mA ...

Page 5

... I = 55A 100 125 150 170 120 100 150 80 130 60 40 110 100 105 110 25 IXXN110N65C4H1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current off on Ω 15V 400V 150º 25º ...

Page 6

... Ω 15V 400V 110A 55A 100 125 150 IXXN110N65C4H1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on Ω 15V 400V 25º 150º ...

Page 7

... 200A F 0.1 100A 0.01 50A 0.001 1200 1400 1600 IXXN110N65C4H1 Fig. 22. Typ. Reverse Recovery Charge 150º 300V 1000 1200 1400 1600 - [A/µs] F Fig. 24. Typ. Recovery Time t 1000 1200 1400 ...

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