STP80N70F6 STMicroelectronics, STP80N70F6 Datasheet
STP80N70F6
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STP80N70F6 Summary of contents
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... STP80N70F6 December 2012 This is information on a product in full production. Power MOSFET in TO-220 package max TOT 96 A 110 W DS(on) Figure 1. Marking 80N70F6 Doc ID 023433 Rev 1 STP80N70F6 − Datasheet production data TAB TO-220 Internal schematic diagram Package Packaging TO-220 Tube 1/13 www.st.com ...
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... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/ Doc ID 023433 Rev 1 STP80N70F6 ...
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... STP80N70F6 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage DS V Gate-source voltage GS (1) I Drain current (continuous (1) I Drain current (continuous (1) I Drain current (pulsed) DM (1) P Total dissipation at T TOT T Storage temperature stg T Operating junction temperature j 1. This value is rated according to R Table 3 ...
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... MHz (see Figure 14) Parameter Test conditions 4.7 Ω (see Figure 13) Doc ID 023433 Rev 1 STP80N70F6 Min. Typ. 68 =125 ° 250 µ 0.0063 D Min. Typ. 5850 - 341 240 Min ...
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... STP80N70F6 Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Pulse width is limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% ...
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... Single pulse tp τ Transfer characteristics 300 250 100 Static drain-source on-resistance V =10V STP80N70F6 0 ( AM15422v1 10 V (V) GS AM15429v1 I ( ...
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... STP80N70F6 Figure 8. Capacitance variations C (pF) 7000 6000 5000 4000 3000 2000 1000 Figure 10. Normalized gate threshold voltage vs temperature V GS(th) (norm) 1.2 I =250 µ 0.8 0.6 0.4 0.2 0 -75 -50 - 100 Figure 12. Source-drain diode forward characteristics V SD (V) 1 0.9 T =25°C J 0.8 0.7 0.6 0.5 0 Figure 9 ...
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... Figure 16. Unclamped inductive load test 3.3 1000 μF μ AM01470v1 Figure 18. Switching time waveform V (BR)DSS 10% 0 AM01472v1 Doc ID 023433 Rev 1 STP80N70F6 12V 47kΩ 100nF I =CONST G 100Ω GMAX 2200 μF 2.7kΩ 47kΩ 1kΩ circuit 2200 3.3 μ ...
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... STP80N70F6 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ® ECOPACK trademark. Doc ID 023433 Rev 1 Package mechanical data ® ...
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... Package mechanical data Table 8. TO-220 type A mechanical data Dim L20 L30 ∅ 10/13 mm Min. Typ. 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 Doc ID 023433 Rev 1 STP80N70F6 Max. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 3.85 2.95 ...
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... STP80N70F6 Figure 19. TO-220 type A drawing Doc ID 023433 Rev 1 Package mechanical data 0015988_typeA_Rev_S 11/13 ...
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... Revision history 5 Revision history Table 9. Document revision history Date 06-Dec-2012 12/13 Revision 1 First release. Doc ID 023433 Rev 1 STP80N70F6 Changes ...
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... STP80N70F6 Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...