SM8S26HE3/2E Vishay Semiconductors, SM8S26HE3/2E Datasheet
SM8S26HE3/2E
Specifications of SM8S26HE3/2E
Related parts for SM8S26HE3/2E
SM8S26HE3/2E Summary of contents
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Surface Mount PAR High Temperature Stability and High Reliability Conditions DO-218AB PRIMARY CHARACTERISTICS (10 x 1000 μs) PPM P ( 000 μs) PPM FSM T max. ...
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ELECTRICAL CHARACTERISTICSS (T BREAKDOWN TEST VOLTAGE DEVICE CURRENT V (V) BR TYPE I T (mA) MIN. MAX. SM6S10 11.1 13.6 5.0 SM6S10A 11.1 12.3 5.0 SM6S11 12.2 14.9 5.0 SM6S11A 12.2 13.5 5.0 SM6S12 13.3 16.3 5.0 SM6S12A 13.3 ...
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THERMAL CHARACTERISTICS (T PARAMETER Typical thermal resistance, junction to case ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) (1) SM6S10AHE3/2D 2.550 Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES ( °C unless otherwise noted) A 8.0 6.0 ...
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Pulse Width (s) Fig Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-218AB 0.628 (16.0) 0.592 (15.0) 0.539 (13.7) 0.524 (13.3) 0.413 (10.5) 0.342 ...
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ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...