VS-GB150TS60NPBF Vishay, VS-GB150TS60NPBF Datasheet

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VS-GB150TS60NPBF

Manufacturer Part Number
VS-GB150TS60NPBF
Description
IGBT Modules 138 Amp 600 Volt Half-Bridge
Manufacturer
Vishay
Datasheet

Specifications of VS-GB150TS60NPBF

Product Category
IGBT Modules
Rohs
yes
Product
IGBT Silicon Modules
Configuration
Dual
Collector- Emitter Voltage Vceo Max
600 V
Continuous Collector Current At 25 C
138 A
Maximum Operating Temperature
+ 150 C
Package / Case
INT-A-PAK
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Factory Pack Quantity
15
Revision: 27-Mar-13
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
Continuous collector current
Pulsed collector current
Clamped inductive load current
Diode continuous forward current
Gate to emitter voltage
Maximum power dissipation
Isolation voltage
V
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
CE(on)
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
at 150 A, 25 °C
I
V
C
CES
DC
www.vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
INT-A-PAK
(Ultrafast Speed IGBT), 138 A
INT-A-PAK "Half-Bridge"
2.64 V
600 V
138 A
SYMBOL
V
V
V
I
I
P
ISOL
CES
CM
I
LM
I
GE
C
F
D
T
T
T
T
T
T
Any terminal to case, t = 1 min
C
C
C
C
C
C
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
= 80 °C
1
TEST CONDITIONS
FEATURES
• Generation 5 Non Punch Through (NPT)
• Ultrafast: Optimized for hard switching speed
• Low V
• 10 μs short circuit capability
• Square RBSOA
• Positive V
• HEXFRED
• Industry standard package
• Al
• UL approved file E78996
• Designed for industrial level
• Material categorization: For definitions of compliance
BENEFITS
• Benchmark efficiency for UPS and welding application
• Rugged transient performance
• Direct mounting on heatsink
• Very low junction to case thermal resistance
technology
8 kHz to 60 kHz
recovery characteristics
please see
2
O
3
DBC
CE(on)
www.vishay.com/doc?91000
CE(on)
®
www.vishay.com/doc?99912
antiparallel diode with ultrasoft reverse
temperature coefficient
Vishay Semiconductors
GB150TS60NPbF
DiodesEurope@vishay.com
MAX.
2500
± 20
600
138
300
300
178
121
500
280
93
Document Number: 94502
UNITS
W
V
A
V
V

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VS-GB150TS60NPBF Summary of contents

Page 1

... Gate to emitter voltage Maximum power dissipation Isolation voltage Revision: 27-Mar-13 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT FEATURES • Generation 5 Non Punch Through (NPT) technology • ...

Page 2

... Diode peak reverse current Diode recovery charge Revision: 27-Mar-13 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH °C unless otherwise specified) ...

Page 3

... Fig Typical Transfer Characteristics 4.5 4 3.5 3 2 Fig Typical Collector to Emitter Voltage vs www.vishay.com/doc?91000 GB150TS60NPbF Vishay Semiconductors TYP. MAX. UNITS - 150 °C 0.17 0.25 0.19 0.32 °C/W 0 185 - 125° 25°C ...

Page 4

... Fig Typical Energy Loss vs 125 ° 200 μ 10000 1000 100 10 150 0 Fig Typical Switching Time vs 125 ° 200 μ www.vishay.com/doc?91000 GB150TS60NPbF Vishay Semiconductors td(off) td(on 120 160 I ...

Page 5

... Fig Typical Switching Losses vs. Junction Temperature 200 μ 1400 /dt Fig Typical Switching Losses vs. Collector to Emitter Current 125 ° www.vishay.com/doc?91000 GB150TS60NPbF Vishay Semiconductors (Ω  360 V, V ...

Page 6

... Fig Maximum Transient Thermal Impedance, Junction to Case (HEXFRED Revision: 27-Mar-13 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Notes: 1. Duty Factor D = t1/t2 ...

Page 7

... CIRCUIT CONFIGURATION Dimensions Revision: 27-Mar-13 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT B 150 ...

Page 8

... DIMENSIONS in millimeters (inches) Ø 6.5 (Ø 0.25) 17 (0.67) 3 screws Revision: 27-Mar-13 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT INT-A-PAK IGBT 80 (3.15) 14 ...

Page 9

... Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications ...

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