IKW40N65H5FKSA1 Infineon Technologies, IKW40N65H5FKSA1 Datasheet
IKW40N65H5FKSA1
Specifications of IKW40N65H5FKSA1
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IKW40N65H5FKSA1 Summary of contents
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IGBT Highspeed5IGBTinTRENCHSTOP fastandsoftantiparalleldiode IKP40N65H5,IKW40N65H5 650VDuoPackIGBTandDiode Highspeedswitchingseriesfifthgeneration Datasheet IndustrialPowerControl TM 5technologycopackedwithRAPID1 ...
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... Highspeed5IGBTinTRENCHSTOP fastandsoftantiparalleldiode FeaturesandBenefits: HighspeedH5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowQ g •IGBTcopackedwithRAPID1fastandsoftantiparalleldiode •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ Applications: •Solarconverters •Uninterruptiblepowersupplies •Weldingconverters • ...
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TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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Maximumratings Parameter Collector-emitter voltage DCcollectorcurrent,limitedbyT T =25° =100°C C Pulsedcollectorcurrent,t limitedbyT p TurnoffsafeoperatingareaV 650V,T CE Diodeforwardcurrent,limitedbyT T =25° =100°C C Diodepulsedcurrent,t limitedbyT p Gate-emitter voltage TransientGate-emittervoltage(t p PowerdissipationT =25°C C PowerdissipationT =100°C C Operating junction ...
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ElectricalCharacteristic,atT =25°C,unlessotherwisespecified vj Parameter StaticCharacteristic Collector-emitter breakdown voltage V Collector-emitter saturation voltage V Diode forward voltage Gate-emitter threshold voltage Zero gate voltage collector current Gate-emitter leakage current Transconductance ElectricalCharacteristic,atT =25°C,unlessotherwisespecified vj Parameter DynamicCharacteristic Input capacitance Output capacitance Reverse transfer capacitance ...
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Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy DiodeCharacteristic,atT =25°C vj Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current I Diode peak rate of fall of ...
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DiodeCharacteristic,atT =150°C vj Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current I Diode peak rate of fall of reverse recoverycurrentduringt b Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current I ...
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DC 0 100 V ,COLLECTOR-EMITTERVOLTAGE[V] CE Figure 1. Forwardbiassafeoperatingarea (D=0,T =25°C,T 175°C; Recommendeduseat ...
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V =20V GE 18V 80 15V 12V 60 10V ,COLLECTOR-EMITTERVOLTAGE[V] CE Figure 5. Typicaloutputcharacteristic (T =150°C) vj 2.50 I =10A C I =20A C I =40A ...
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G Figure 9. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,T =150°C, =15/0V,I =20A,Dynamictestcircuit Figure E) 5.5 typ. min. 5.0 ...
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E off 1.4 ts 1.2 1.0 0.8 0.6 0.4 0.2 0 ,GATERESISTOR Figure 13. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,T =150°C, =15/0V,I =20A,Dynamictestcircuit Figure E) 1.0 ...
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C iss C oss C rss 1000 100 ,COLLECTOR-EMITTERVOLTAGE[V] CE Figure 17. Typicalcapacitanceasafunctionof collector-emittervoltage (V =0V,f=1MHz 0.1 0. [K/W]: 0.6701584 i [s]: 3.4E-4 i 0.001 1E-7 1E-6 ...
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T =25° 20A =150° 20A j F 1.0 0.8 0.6 0.4 0.2 500 700 900 1100 di /dt,DIODECURRENTSLOPE[A/µs] F Figure 21. Typicalreverserecoverychargeasa functionofdiodecurrentslope (V =400V =25° 20A ...
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T ,JUNCTIONTEMPERATURE[°C] vj Figure 25. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature IKW40N65H5,IKP40N65H5 Highspeedswitchingseriesfifthgeneration I =10A F I =20A F I =40A F 150 175 14 Rev.1.1,2012-11-09 ...
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IKW40N65H5,IKP40N65H5 Highspeedswitchingseriesfifthgeneration PG-TO247-3 15 Rev.1.1,2012-11-09 ...
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IKW40N65H5,IKP40N65H5 Highspeedswitchingseriesfifthgeneration PG-TO220-3 16 Rev.1.1,2012-11-09 ...
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IKW40N65H5,IKP40N65H5 Highspeedswitchingseriesfifthgeneration 17 t Rev.1.1,2012-11-09 ...
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RevisionHistory IKW40N65H5, IKP40N65H5 Revision:2012-11-09,Rev.1.1 Previous Revision Revision Date Subjects (major changes since last revision) 1.1 2012-11-09 Preliminary data sheet WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? Yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. Pleasesendyourproposal(includingareferencetothisdocument)to:erratum@infineon.com Publishedby InfineonTechnologiesAG 81726Munich,Germany 81726München,Germany ©2012InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin question,pleasecontactthenearestInfineonTechnologiesOffice. ...