BAS21_S00Z Fairchild Semiconductor, BAS21_S00Z Datasheet
BAS21_S00Z
Manufacturer Part Number
BAS21_S00Z
Description
Rectifiers Gen Purpose Diode High Voltage
Manufacturer
Fairchild Semiconductor
Datasheet
1.BAS21_S00Z.pdf
(3 pages)
Specifications of BAS21_S00Z
Product Category
Rectifiers
Rohs
yes
Product
Standard Recovery Rectifiers
Configuration
Single
Reverse Voltage
250 V
Forward Voltage Drop
1.25 V
Recovery Time
50 ns
Forward Continuous Current
0.2 A
Max Surge Current
2 A
Reverse Current Ir
0.1 uA
Mounting Style
SMD/SMT
Package / Case
SOT-23
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Power Dissipation
0.35 W
Factory Pack Quantity
750
ã 2002 Fairchild Semiconductor Corporation
W
I
I
i
i
T
T
P
R
Symbol
Symbol
f
f(surge)
O
F
Absolute Maximum Ratings*
stg
J
General Purpose High Voltage Diode
Sourced from Process 1H. See MMBD1401 for characteristics.
D
*
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
IV
JA
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
SOT-23
Working Inverse Voltage
Average Rectified Current
DC Forward Current
Recurrent Peak Forward Current
Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Derate above 25 C
3
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Characteristic
1
2
Parameter
TA = 25°C unless otherwise noted
BAS21
TA = 25°C unless otherwise noted
1
A82.
3
2
CONNECTION DIAGRAM
BAS21
Max
350
357
2.8
-55 to +150
Value
1
250
200
600
150
700
1.0
2.0
3
2 NC
Units
mW/ C
Units
mA
mA
mA
mW
V
A
A
C/W
C
C
BAS21. Rev. A1
Related parts for BAS21_S00Z
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
BAS21_S00Z Summary of contents
Page 1
... These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol Characteristic P Total Device Dissipation D Derate above 25 C Thermal Resistance, Junction to Ambient R JA ã 2002 Fairchild Semiconductor Corporation BAS21 3 A82 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted CONNECTION DIAGRAM ...
Page 2
Electrical Characteristics Symbol Parameter B Breakdown Voltage V I Reverse Voltage Leakage Current R V Forward Voltage F C Diode Capacitance O T Reverse Recovery Time RR General Purpose High Voltage Diode TA = 25°C unless otherwise noted Test Conditions ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ FRFET™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ ...