IKW40N65F5 Infineon Technologies, IKW40N65F5 Datasheet

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IKW40N65F5

Manufacturer Part Number
IKW40N65F5
Description
IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
Manufacturer
Infineon Technologies
Datasheet

Specifications of IKW40N65F5

Collector- Emitter Voltage Vceo Max
650 V
Collector-emitter Saturation Voltage
2.1 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current At 25 C
74 A
Gate-emitter Leakage Current
100 nA
Power Dissipation
120 W
Package / Case
PG-TO-247-3
Mounting Style
Through Hole
Part # Aliases
IKW40N65F5FKSA1

Available stocks

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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IKW40N65F5
Quantity:
7 500
IGBT
TM
Highspeed5FASTIGBTinTRENCHSTOP
5technologycopackedwithRAPID1
fastandsoftantiparalleldiode
IKP40N65F5,IKW40N65F5
650VDuoPackIGBTandDiode
Highspeedswitchingseriesfifthgeneration
Datasheet
IndustrialPowerControl

Related parts for IKW40N65F5

IKW40N65F5 Summary of contents

Page 1

... IGBT Highspeed5FASTIGBTinTRENCHSTOP fastandsoftantiparalleldiode IKP40N65F5,IKW40N65F5 650VDuoPackIGBTandDiode Highspeedswitchingseriesfifthgeneration Datasheet IndustrialPowerControl TM 5technologycopackedwithRAPID1 ...

Page 2

... Packagepindefinition: •Pin1-gate •Pin2&backside-collector •Pin3-emitter KeyPerformanceandPackageParameters Type V CE IKW40N65F5 650V 40A IKP40N65F5 650V 40A IKW40N65F5,IKP40N65F5 Highspeedswitchingseriesfifthgeneration TM 5technologycopackedwith I V ,T =25° CEsat vj vjmax 1.6V 175°C 1.6V 175°C ...

Page 3

... TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package Drawing PG-TO247 .15 Package Drawing PG-TO220 .16 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18 IKW40N65F5,IKP40N65F5 Highspeedswitchingseriesfifthgeneration 3 Rev.1.1,2012-11-09 ...

Page 4

... Mounting torque, M3 screw Maximum of mounting processes: 3 ThermalResistance Parameter Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Thermal resistance junction - ambient IKW40N65F5,IKP40N65F5 Highspeedswitchingseriesfifthgeneration Symbol V CE vjmax vjmax Cpuls  175°C ...

Page 5

... Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case SwitchingCharacteristic,InductiveLoad,atT Parameter IGBTCharacteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy IKW40N65F5,IKP40N65F5 Highspeedswitchingseriesfifthgeneration Symbol Conditions V =0V,I =0.20mA (BR)CES =15.0V,I =40. =25° ...

Page 6

... Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy IKW40N65F5,IKP40N65F5 Highspeedswitchingseriesfifthgeneration t T =25°C, d(on =400V,I =5.0A =0 ...

Page 7

... Diode reverse recovery charge Diode peak reverse recovery current I Diode peak rate of fall of reverse recoverycurrentduringt b Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current I Diode peak rate of fall of reverse recoverycurrentduringt b IKW40N65F5,IKP40N65F5 Highspeedswitchingseriesfifthgeneration t T =150° =400V ...

Page 8

... T ,CASETEMPERATURE[°C] C Figure 3. Collectorcurrentasafunctionofcase temperature (V 15V,T 175° IKW40N65F5,IKP40N65F5 Highspeedswitchingseriesfifthgeneration 275 250 225 200 175 150 125 100 1000 25 50 Figure 2. Powerdissipationasafunctionofcase =15V. temperature GE 7.5V ...

Page 9

... Figure 5. Typicaloutputcharacteristic (T =150°C) vj 2.50 I =10A C I =20A C I =40A 2.25 C 2.00 1.75 1.50 1.25 1.00 0.75 0. 100 T ,JUNCTIONTEMPERATURE[°C] vj Figure 7. Typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature (V =15V) GE IKW40N65F5,IKP40N65F5 Highspeedswitchingseriesfifthgeneration 120 T =25° =150°C j 100 4.5 5 Figure 6. Typicaltransfercharacteristic (V =20V) CE 1000 t d(off d(on 100 ...

Page 10

... V =15/0V,I =20A,Dynamictestcircuit Figure E) 5.5 typ. min. 5.0 max. 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1 100 T ,JUNCTIONTEMPERATURE[°C] vj Figure 11. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (I =0.4mA) C IKW40N65F5,IKP40N65F5 Highspeedswitchingseriesfifthgeneration 1000 t d(off d(on 100 ,JUNCTIONTEMPERATURE[°C] vj Figure 10. Typicalswitchingtimesasafunctionof junctiontemperature =400V, (inductiveload, =20A,r C Figure ...

Page 11

... E 0 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 200 250 300 350 400 V ,COLLECTOR-EMITTERVOLTAGE[V] CE Figure 15. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,T =150°C, =20A,r =15 ,Dynamictestcircuit Figure E) IKW40N65F5,IKP40N65F5 Highspeedswitchingseriesfifthgeneration 0.8 E off 0.7 ts 0.6 0.5 0.4 0.3 0.2 0.1 0 ,JUNCTIONTEMPERATURE[°C] vj Figure 14. Typicalswitchingenergylossesasa functionofjunctiontemperature =400V, (inductiveload, =20A,r C ...

Page 12

... V ,COLLECTOR-EMITTERVOLTAGE[V] CE Figure 17. Typicalcapacitanceasafunctionof collector-emittervoltage (V =0V,f=1MHz 0.1 0. [K/W]: 0.6701584 i [s]: 3.4E-4 i 0.001 1E-7 1E-6 1E-5 1E-4 0.001 t ,PULSEWIDTH[s] p Figure 19. Diodetransientthermalimpedanceasa functionofpulsewidth (D=t /T) p IKW40N65F5,IKP40N65F5 Highspeedswitchingseriesfifthgeneration 1 0.1 0.01 0.001 1E-6 1E-5 Figure 18. IGBTtransientthermalresistance (D=t 130 120 D=0.5 110 0.2 0.1 100 0.05 0.02 90 0.01 single pulse 0.775759 0.3540826 4.7E-3 0.04680901 40 0.01 ...

Page 13

... F -50 -100 -150 -200 -250 -300 -350 -400 500 700 900 1100 di /dt,DIODECURRENTSLOPE[A/µs] F Figure 23. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (V =400V) R IKW40N65F5,IKP40N65F5 Highspeedswitchingseriesfifthgeneration 20 T =25° =150° ...

Page 14

... T ,JUNCTIONTEMPERATURE[°C] vj Figure 25. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature IKW40N65F5,IKP40N65F5 Highspeedswitchingseriesfifthgeneration I =10A F I =20A F I =40A F 150 175 14 Rev.1.1,2012-11-09 ...

Page 15

... IKW40N65F5,IKP40N65F5 Highspeedswitchingseriesfifthgeneration PG-TO247-3 15 Rev.1.1,2012-11-09 ...

Page 16

... IKW40N65F5,IKP40N65F5 Highspeedswitchingseriesfifthgeneration PG-TO220-3 16 Rev.1.1,2012-11-09 ...

Page 17

... IKW40N65F5,IKP40N65F5 Highspeedswitchingseriesfifthgeneration 17 t Rev.1.1,2012-11-09 ...

Page 18

... RevisionHistory IKW40N65F5, IKP40N65F5 Revision:2012-11-09,Rev.1.1 Previous Revision Revision Date Subjects (major changes since last revision) 1.1 2012-11-09 Preliminary data sheet WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? Yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. Pleasesendyourproposal(includingareferencetothisdocument)to:erratum@infineon.com Publishedby InfineonTechnologiesAG 81726Munich,Germany 81726München,Germany © ...

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