FDMS86152 Fairchild Semiconductor, FDMS86152 Datasheet

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FDMS86152

Manufacturer Part Number
FDMS86152
Description
MOSFET 100V N-Channel Power Trench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FDMS86152

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
45 A
Resistance Drain-source Rds (on)
6 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
Power 56
Fall Time
5 ns
Forward Transconductance Gfs (max / Min)
42 S
Gate Charge Qg
36 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
125 W
Rise Time
6 ns
Typical Turn-off Delay Time
25 ns

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMS86152
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
FDMS86152
Quantity:
200
©2013 Fairchild Semiconductor Corporation
FDMS86152 Rev.C
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDMS86152
N-Channel PowerTrench
100 V, 45 A, 6 mΩ
Features
V
V
I
E
P
T
R
R
D
J
DS
GS
AS
D
θJC
θJA
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
MSL1 robust package design
100% UIL tested
RoHS Compliant
, T
Symbol
Device Marking
STG
FDMS86152
Pin 1
DS(on)
DS(on)
= 6 mΩ at V
= 11 mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Top
GS
GS
= 10 V, I
= 6 V, I
FDMS86152
-Continuous
-Pulsed
Device
Power 56
D
D
= 11.5 A
= 14 A
T
®
A
= 25 °C unless otherwise noted
D
MOSFET
Parameter
D
D
Power 56
Package
DS(on)
D
Bottom
S
1
T
T
T
T
General Description
This
Semiconductor‘s advanced Power Trench
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Applications
C
A
C
A
S
= 25 °C
= 25 °C
= 25 °C
= 25 °C
Primary DC-DC MOSFET
Secondary Synchronous Rectifier
Load Switch
S
N-Channel
Pin 1
G
Reel Size
13 ’’
(Note 1a)
(Note 1a)
(Note 1a)
(Note 3)
MOSFET
S
S
G
S
Tape Width
12 mm
is
-55 to +150
Ratings
produced using Fairchild
100
±20
260
541
125
2.7
1.0
45
14
45
®
process thant has
February 2013
www.fairchildsemi.com
3000 units
Quantity
D
D
D
D
Units
°C/W
mJ
°C
W
V
V
A

Related parts for FDMS86152

FDMS86152 Summary of contents

Page 1

... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDMS86152 FDMS86152 ©2013 Fairchild Semiconductor Corporation FDMS86152 Rev.C ® MOSFET General Description This N-Channel = Semiconductor‘s advanced Power Trench = 11.5 A been especially tailored to minimize the on-state resistance and D yet maintain superior switching performance ...

Page 2

... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. ° 3. Starting mH ©2013 Fairchild Semiconductor Corporation FDMS86152 Rev °C unless otherwise noted J Test Conditions = 250 μ 250 μA, referenced to 25 °C ...

Page 3

... V DS 130 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2013 Fairchild Semiconductor Corporation FDMS86152 Rev °C unless otherwise noted μ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX ...

Page 4

... C/W θ CURVE BENT TO MEASURED DATA 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2013 Fairchild Semiconductor Corporation FDMS86152 Rev °C unless otherwise noted J 5000 1000 100 ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 0.0001 - Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2013 Fairchild Semiconductor Corporation FDMS86152 Rev °C unless otherwise noted J SINGLE PULSE 115 C/W θ RECTANGULAR PULSE DURATION (sec ...

Page 6

... Dimensional Outline and Pad Layout L C PKG PIN #1 IDICATOR (0.38) 0.65 0.55 PIN #1 INDICATOR 0.42 (8X) 0.10 C 0.80 0.70 0.08 C ©2013 Fairchild Semiconductor Corporation FDMS86152 Rev.C 5.10 A 4.90 PKG 1.14 3.65 4.79 6.25 5.90 1. TOP VIEW 1 1.27 SEE DETAIL A RECOMMENDATION SIDE VIEW 3.81 1.27 0. (1.69) (0.35) NOTES: UNLESS OTHERWISE SPECIFIED 4.66 A) PACKAGE STANDARD REFERENCE: 4.46 B) ALL DIMENSIONS ARE IN MILLIMETERS. ...

Page 7

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2013 Fairchild Semiconductor Corporation FDMS86152 Rev.C ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ™ ...

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