BSZ16DN25NS3 G Infineon Technologies, BSZ16DN25NS3 G Datasheet
BSZ16DN25NS3 G
Specifications of BSZ16DN25NS3 G
Related parts for BSZ16DN25NS3 G
BSZ16DN25NS3 G Summary of contents
Page 1
... =100 ° =25 °C D,pulse =25 °C tot stg page 1 BSZ16DN25NS3 G Product Summary V 250 DS R 165 DS(on),max I 10.9 D PG-TSDSON-8 Value 10.9 7.7 44 120 10 ±20 62.5 -55 ... 150 55/150/ Unit A mJ kV/µ ° ...
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... GSS = =5.5 A DS(on |>2 DS(on)max =5 (one layer, 70 µm thick) copper area for drain page 2 BSZ16DN25NS3 G Values min. typ. max 250 - - 0 100 - 1 100 - 146 165 - 2 ...
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... Q V =100 oss =25 ° S,pulse =10 =25 ° =100 /dt =100 A/µ page 3 BSZ16DN25NS3 G Values Unit min. typ. max. - 690 920 ...
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... Max. transient thermal impedance Z =f(t ) thJC p parameter µs 10 µs 100 µ 0.1 0. page 4 BSZ16DN25NS3 G ≥ 120 T [° 0.02 0.01 single pulse - [s] p 2011-07-14 160 0 10 ...
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... V 200 5.5 V 160 5 V 120 80 4 Typ. forward transconductance g =f ° [V] page 5 BSZ16DN25NS3 =25 ° 5 [A] D =25 ° [ 2011-07-14 ...
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... Forward characteristics of reverse diode I =f parameter: T 100 Ciss 10 1 0.1 120 160 200 [V] page 6 BSZ16DN25NS3 320 µA 32 µA - 100 T [° °C 150 °C 25 °C, 98% 0 0.5 1 1.5 V [V] SD 140 180 150 °C, 98% ...
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... Typ. gate charge V =f(Q GS gate parameter °C 8 100 °C 6 125 ° 100 1000 0 16 Gate charge waveforms gs(th) Q g(th) 100 140 180 page 7 BSZ16DN25NS3 =5.5 A pulsed D DD 200 V 125 [nC] gate 2011-07-14 9 ...
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... Package Outline:PG-TSDSON-8 Rev. 2.2 page 8 BSZ16DN25NS3 G 2011-07-14 ...
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... Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain Rev. 2.2 page 9 BSZ16DN25NS3 G 2011-07-14 ...