IPP110N20NAXK Infineon Technologies, IPP110N20NAXK Datasheet
IPP110N20NAXK
Specifications of IPP110N20NAXK
Related parts for IPP110N20NAXK
IPP110N20NAXK Summary of contents
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OptiMOS TM 3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 • ...
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Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance 2) Device on 40 ...
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Parameter 4) Dynamic characteristic Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time 3) Gate Charge Characteristics Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau ...
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Power dissipation P =f(T ) tot C 320 280 240 200 160 120 100 T [° Safe operating area I =f =25 ° parameter: t ...
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Typ. output characteristics I =f =25 ° parameter 200 10 V 175 7 V 150 125 100 [ Typ. transfer characteristics I ...
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Drain-source on-state resistance =10 V DS(on typ -60 - [° Typ. capacitances C =f ...
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Avalanche characteristics = =f parameter: T j(start) 100 125 ° [µ Drain-source breakdown voltage V =f BR(DSS 230 220 ...
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PG-TO220-3: Outline Rev. 2.1 IPB107N20NA page 8 IPP110N20NA 2011-05-11 ...
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PG-TO263-3: Outline Rev. 2.1 IPB107N20NA page 9 IPP110N20NA 2011-05-11 ...
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... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system ...