BAV99_S00Z Fairchild Semiconductor, BAV99_S00Z Datasheet

BAV99_S00Z

Manufacturer Part Number

BAV99_S00Z

Description

Rectifiers High Conductance Ultra Fast

Manufacturer

Fairchild Semiconductor

Datasheet

1.BAV99_S00Z.pdf (4 pages)

Specifications of BAV99_S00Z

Product Category

Rectifiers

Rohs

yes

Product

Ultra Fast Recovery Rectifiers

Configuration

Dual Series

Reverse Voltage

70 V

Forward Voltage Drop

1.25 V at 0.15 A

Recovery Time

6 ns

Forward Continuous Current

0.2 A

Max Surge Current

2 A

Reverse Current Ir

2.5 uA

Mounting Style

SMD/SMT

Package / Case

SOT-23

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 55 C

Power Dissipation

0.35 W

Factory Pack Quantity

750

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BAV99 Rev. C1

BAV99

Small Signal Diode

Absolute Maximum Ratings*

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle

Thermal Characteristics

Electrical Characteristics

operations.

Symbol

F(AV)

FSM

RRM

θJA

stg

Maximum Repetitive Reverse Voltage

Average Rectified Forward Current

Non-repetitive Peak Forward Surge Current

Storage Temperature Range

Operating Junction Temperature

Power Dissipation

Thermal Resistance, Junction to Ambient

Breakdown Voltage

Forward Voltage

Reverse Leakage

Total Capacitance

Reverse Recovery Time I

SOT-23

Parameter

Pulse Width = 1.0 second

Pulse Width = 300 microseconds

Parameter

= 25°C unless otherwise noted

= 1.0mA

= 10mA

= 50mA

= 150mA

= I

= 100μA

= 100Ω

= 70V

= 25V, T

= 70V, T

= 0V, f = 1.0MHz

Test Condition

= 10mA, I

= 150°C

= 1.0mA,

Connection Diagram

Min.

-55 to +150

Value

200

350

357

1.0

8.0

Max.

1.25

715

855

1.0

2.5

6.0

1.5

www.fairchildsemi.com

August 2011

Units

°C/W

μA

°C

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BAV99_S00Z Summary of contents

Page 1

... Parameter V Breakdown Voltage R V Forward Voltage F I Reverse Leakage R C Total Capacitance T t Reverse Recovery Time I rr © 2011 Fairchild Semiconductor Corporation BAV99 Rev 25°C unless otherwise noted A Parameter Parameter T = 25°C unless otherwise noted A Test Condition I = 100μ ...

Page 2

... Figure 3. Forward Voltage vs Forward Current VF - 1.0 to 100 uA ° Ta 1.4 1.2 1.0 0.8 0 Forw ard C urrent, I Figure 5. Forward Voltage vs Forward Current 800 mA © 2011 Fairchild Semiconductor Corporation BAV99 Rev. C1 300 250 200 150 100 100 10 [uA] R Figure 2. Reverse Current vs Reverse Voltage ...

Page 3

... Ta 3.5 3.0 2.5 2.0 1.5 1 Reverse Current [mA] Figure 7. Reverse Recovery Time vs Reverse Current TRR - © 2011 Fairchild Semiconductor Corporation BAV99 Rev. C1 (Continued) 400 300 200 100 Figure 8. Average Rectified Current (I versus Ambient Temperature (T 500 400 DO - ...

Page 4

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. 2Cool FPS AccuPower F-PFS FRFET Auto-SPM Global Power Resource AX-CAP * ® Green FPS BitSiC ...

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