BAV99_S00Z

Manufacturer Part NumberBAV99_S00Z
DescriptionRectifiers High Conductance Ultra Fast
ManufacturerFairchild Semiconductor
BAV99_S00Z datasheet
 


Specifications of BAV99_S00Z

Product CategoryRectifiersRohsyes
ProductUltra Fast Recovery RectifiersConfigurationDual Series
Reverse Voltage70 VForward Voltage Drop1.25 V at 0.15 A
Recovery Time6 nsForward Continuous Current0.2 A
Max Surge Current2 AReverse Current Ir2.5 uA
Mounting StyleSMD/SMTPackage / CaseSOT-23
Maximum Operating Temperature+ 150 CMinimum Operating Temperature- 55 C
Power Dissipation0.35 WFactory Pack Quantity750
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BAV99
Small Signal Diode
3
1
SOT-23
Absolute Maximum Ratings*
Symbol
V
Maximum Repetitive Reverse Voltage
RRM
I
Average Rectified Forward Current
F(AV)
I
Non-repetitive Peak Forward Surge Current
FSM
Pulse Width = 1.0 second
Pulse Width = 300 microseconds
T
Storage Temperature Range
stg
T
Operating Junction Temperature
j
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics
Symbol
P
Power Dissipation
D
R
Thermal Resistance, Junction to Ambient
θJA
Electrical Characteristics
Symbol
Parameter
V
Breakdown Voltage
R
V
Forward Voltage
F
I
Reverse Leakage
R
C
Total Capacitance
T
t
Reverse Recovery Time I
rr
© 2011 Fairchild Semiconductor Corporation
BAV99 Rev. C1
3
A7
2
1
2
T
= 25°C unless otherwise noted
A
Parameter
Parameter
T
= 25°C unless otherwise noted
A
Test Condition
I
= 100μA
R
I
= 1.0mA
F
I
= 10mA
F
I
= 50mA
F
I
= 150mA
F
V
= 70V
R
V
= 25V, T
= 150°C
R
A
V
= 70V, T
= 150°C
R
A
V
= 0V, f = 1.0MHz
R
= I
= 10mA, I
= 1.0mA,
F
R
RR
R
= 100Ω
L
1
August 2011
Connection Diagram
3
1
2
Value
Units
70
V
200
mA
1.0
A
8.0
A
°C
-55 to +150
°C
-55 to +150
Value
Units
350
mW
°C/W
357
Min.
Max.
Units
70
V
715
mV
855
mV
1.0
V
1.25
V
μA
2.5
μA
30
μA
50
1.5
pF
6.0
ns
www.fairchildsemi.com

BAV99_S00Z Summary of contents

  • Page 1

    ... Parameter V Breakdown Voltage R V Forward Voltage F I Reverse Leakage R C Total Capacitance T t Reverse Recovery Time I rr © 2011 Fairchild Semiconductor Corporation BAV99 Rev 25°C unless otherwise noted A Parameter Parameter T = 25°C unless otherwise noted A Test Condition I = 100μ ...

  • Page 2

    ... Figure 3. Forward Voltage vs Forward Current VF - 1.0 to 100 uA ° Ta 1.4 1.2 1.0 0.8 0 Forw ard C urrent, I Figure 5. Forward Voltage vs Forward Current 800 mA © 2011 Fairchild Semiconductor Corporation BAV99 Rev. C1 300 250 200 150 100 100 10 [uA] R Figure 2. Reverse Current vs Reverse Voltage ...

  • Page 3

    ... Ta 3.5 3.0 2.5 2.0 1.5 1 Reverse Current [mA] Figure 7. Reverse Recovery Time vs Reverse Current TRR - © 2011 Fairchild Semiconductor Corporation BAV99 Rev. C1 (Continued) 400 300 200 100 Figure 8. Average Rectified Current (I versus Ambient Temperature (T 500 400 DO - ...

  • Page 4

    ... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. 2Cool FPS AccuPower F-PFS FRFET Auto-SPM Global Power Resource AX-CAP * ® Green FPS BitSiC ...