SIZ918DT-T1-GE3 Vishay/Siliconix, SIZ918DT-T1-GE3 Datasheet

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SIZ918DT-T1-GE3

Manufacturer Part Number
SIZ918DT-T1-GE3
Description
MOSFET 30V 16A/28A 29/100W 12mohm / 3.7mohm@10V
Manufacturer
Vishay/Siliconix
Datasheet

Specifications of SIZ918DT-T1-GE3

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
28 A
Resistance Drain-source Rds (on)
0.012 Ohms
Configuration
Dual
Mounting Style
SMD/SMT
Package / Case
PowerPAIR 6 x 5
Power Dissipation
100 W
Part # Aliases
SIZ918DT-GE3
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 65 °C/W for channel-1 and 55 °C/W for channel-2.
Document Number: 63783
S12-0543 Rev. A, 12-Mar-12
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Channel-1
Channel-2
Ordering Information: SiZ918DT-T1-GE3 (Lead (Pb)-free and Halogen-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (t = 300 µs)
Continuous Source Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
8
G
2
7
Pin 1
6
V
S
PowerPAIR
2
DS
5
30
30
S
Pin 9
1
/D
(V)
2
1
0.0145 at V
0.0045 at V
0.0120 at V
0.0037 at V
G
D
R
2
1
®
1
DS(on)
6 x 5
D
1
3
J
6 mm
Dual N-Channel 30 V (D-S) MOSFETs
= 150 °C)
D
b, f
1
4
() (Max.)
5 mm
GS
GS
GS
GS
D
For more information please contact:
1
= 4.5 V
= 4.5 V
= 10 V
= 10 V
I
This document is subject to change without notice.
D
16
16
28
28
(A)
d, e
a
a
a
a
A
Q
= 25 °C, unless otherwise noted)
Steady State
6.8 nC
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
g
32 nC
C
C
C
C
C
A
A
A
A
A
t  10 s
(Typ.)
New Product
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
pmostechsupport@vishay.com
FEATURES
APPLICATIONS
• TrenchFET
• 100 % R
• Material categorization:
• Notebook System Power
• POL
• Synchronous Buck Converter
Symbol
Symbol
T
R
R
J
V
V
E
I
I
P
For definitions of compliance please see
www.vishay.com/doc?99912
, T
DM
thJC
I
I
AS
thJA
GS
DS
D
AS
S
D
stg
g
N-Channel 1
N-Channel 2
and UIS Tested
Typ.
3.4
®
MOSFET
MOSFET
24
Channel-1
Channel-1
G
G
Power MOSFETs
14.3
11.4
2
3.4
4.2
2.7
1
16
16
16
50
18
16
29
18
b, c
b, c
b, c
a
a
a
b, c
b, c
Max.
4.3
30
- 55 to 150
± 20
260
30
D
S
2
1
Typ.
19
Channel-2
Channel-2
1
26
21
4.3
5.2
3.3
28
28
110
28
100
Vishay Siliconix
35
61
64
a, b, c
a, b, c
b, c
b, c
b, c
www.vishay.com/doc?91000
a
a
a
S
Max.
1
1.25
/D
24
SiZ918DT
2
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

Related parts for SIZ918DT-T1-GE3

SIZ918DT-T1-GE3 Summary of contents

Page 1

... Pin Ordering Information: SiZ918DT-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (t = 300 µs) Continuous Source Drain Diode Current Single Pulse Avalanche Current ...

Page 2

... SiZ918DT Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate Threshold Voltage Gate Source Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance ...

Page 3

... Channel dI/dt = 100 A/µ ° Channel dI/dt = 100 A/µ ° pmostechsupport@vishay.com This document is subject to change without notice. SiZ918DT Vishay Siliconix Min. Typ. Max. Unit Ch-1 10 ...

Page 4

... SiZ918DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted thru 0.0 0.5 1.0 1.5 2 Drain-to-Source Voltage (V) DS Output Characteristics 0.014 0.012 0.010 0.008 0.006 Drain Current (A) D On-Resistance vs. Drain Current ...

Page 5

... BVDSS Limited 0 Drain-to-Source Voltage ( > minimum V at which R is specified GS GS DS(on) Safe Operating Area, Junction-to-Ambient pmostechsupport@vishay.com This document is subject to change without notice. SiZ918DT Vishay Siliconix 125 ° ° Gate-to-Source Voltage ( ...

Page 6

... SiZ918DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted Package Limited 100 T - Case Temperature (°C) C Current Derating* * The power dissipation P is based J(max) dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...

Page 7

... S12-0543 Rev. A, 12-Mar-12 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT New Product 0.01 0.1 1 Square Wave Pulse Duration (s) 0.01 Square Wave Pulse Duration (s) pmostechsupport@vishay.com This document is subject to change without notice. SiZ918DT Vishay Siliconix Notes Duty Cycle ...

Page 8

... SiZ918DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 thru 0.0 0.5 1.0 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.0045 0.0040 0.0035 0.0030 0.0025 0.0020 Drain Current (A) D On-Resistance vs. Drain Current ...

Page 9

... BVDSS Limited 0.01 0 Drain-to-Source Voltage ( > minimum V at which R is specified GS GS DS(on) Safe Operating Area, Junction-to-Ambient pmostechsupport@vishay.com This document is subject to change without notice. SiZ918DT Vishay Siliconix 125 ° ° Gate-to-Source Voltage ( ...

Page 10

... SiZ918DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 140 120 100 Package Limited 100 T - Case Temperature (°C) C Current Derating* * The power dissipation P is based J(max.) dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...

Page 11

... THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT New Product 0.01 0.1 1 Square Wave Pulse Duration (s) 0.001 0.01 Square Wave Pulse Duration (s) pmostechsupport@vishay.com This document is subject to change without notice. SiZ918DT Vishay Siliconix Notes Duty Cycle ...

Page 12

PowerPAIR D 0. Pin 8 Pin 7 Pin 6 Pin 2 Pin 1 Pin 3 TOP SIDE VIEW 0.10 C 0.08 C MILLIMETERS DIM. MIN. A 0. ...

Page 13

RECOMMENDED MINIMUM PAD FOR PowerPAIR Document Number: 67480 Revision: 13-Jan-11 ® 7.080 (0.279) (0,0) 0.567 (0.022) 3.920 (0.154) 2.153 (0.085) 3.260 Pin 1 (0.128) 1.270 (0.050) Recommended Minimum Pad Dimensions in mm (inches) PAD Pattern Vishay Siliconix ...

Page 14

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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