BSS316NH6327XT Infineon Technologies, BSS316NH6327XT Datasheet

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BSS316NH6327XT

Manufacturer Part Number
BSS316NH6327XT
Description
MOSFET OptiMOS 2 Small Signal Transistor
Manufacturer
Infineon Technologies
Datasheet

Specifications of BSS316NH6327XT

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.4 A
Resistance Drain-source Rds (on)
160 mOhms at 10 V
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
PG-SOT-23
Fall Time
1 ns
Gate Charge Qg
0.6 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
500 mW
Rise Time
2.3 ns
Typical Turn-off Delay Time
5.8 ns
Part # Aliases
BSS316N BSS316NH6327XTSA1 H6327

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSS316NH6327XTSA1
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev 2.3
Features
• N-channel
• Enhancement mode
• Logic level (4.5V rated)
• Avalanche rated
• Qualified according to AEC Q101
• 100%lead-free; RoHS compliant
• Halogen-free according to IEC61249-2-21
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
ESD Class
Soldering Temperature
IEC climatic category; DIN IEC 68-1
OptiMOS
Type
BSS316N
2 Small-Signal-Transistor
Package
SOT23
j
=25 °C, unless otherwise specified
Tape and Reel Information
H6327: 3000 pcs/ reel
Symbol Conditions
I
I
E
dv /dt
V
P
T
D
D,pulse
j
AS
GS
tot
, T
stg
T
T
T
I
I
di /dt =200 A/µs,
T
T
D
D
JESD22-A114 -HBM
page 1
A
A
A
j,max
A
=1.4 A, R
=1.4 A, V
=25 °C
=70 °C
=25 °C
=25 °C
=150 °C
DS
GS
=16 V,
=25 Ω
V
R
I
Product Summary
D
DS
DS(on),max
Marking
SYs
V
V
Lead Free
Yes
GS
GS
-55 ... 150
0 (<250V)
55/150/56
=10 V
=4.5 V
260 °C
Value
±20
1.4
1.1
5.6
3.7
0.5
PG-SOT23
6
1
Packing
Non dry
160
280
1.4
2
30
BSS316N
3
Unit
A
mJ
kV/µs
V
W
°C
V
A
2011-07-06

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BSS316NH6327XT Summary of contents

Page 1

OptiMOS 2 Small-Signal-Transistor Features • N-channel • Enhancement mode • Logic level (4.5V rated) • Avalanche rated • Qualified according to AEC Q101 • 100%lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21 Type Package BSS316N SOT23 Maximum ratings, at ...

Page 2

Parameter Thermal characteristics Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current Gate-source leakage current Drain-source on-state resistance Transconductance 1) 2 Performed on 40mm FR4 PCB. The traces are ...

Page 3

Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode ...

Page 4

Power dissipation =f tot A 0.5 0.375 0.25 0.125 Safe operating area =f =25 ° parameter ...

Page 5

Typ. output characteristics =f =25 ° parameter 4 0 Typ. transfer characteristics =f |>2 ...

Page 6

Drain-source on-state resistance = DS(on 300 250 200 98 % 150 100 50 0 -60 - Typ. capacitances C =f ...

Page 7

Avalanche characteristics =25 Ω =f parameter: T j(start Drain-source breakdown voltage =f =250 µA V BR(DSS) ...

Page 8

Package Outline: Footprint: Dimensions in mm Rev 2.3 SOT23 Packaging: page 8 BSS316N 2011-07-06 ...

Page 9

... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system ...

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