BSS83PH6327XT Infineon Technologies, BSS83PH6327XT Datasheet

BSS83PH6327XT

Manufacturer Part Number

BSS83PH6327XT

Description

MOSFET SIPMOS Small Signal Transistor

Manufacturer

Infineon Technologies

Datasheet

1.BSS83PH6327XT.pdf (9 pages)

Specifications of BSS83PH6327XT

Rohs

yes

Transistor Polarity

P-Channel

Drain-source Breakdown Voltage

- 60 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

- 330 mA

Resistance Drain-source Rds (on)

2 Ohms at -4.5 V

Configuration

Single

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

PG-SOT-23

Fall Time

64 ns

Gate Charge Qg

2.38 nC

Minimum Operating Temperature

- 55 C

Power Dissipation

360 mW

Rise Time

71 ns

Typical Turn-off Delay Time

56 ns

Part # Aliases

BSS83P BSS83PH6327XTSA1 H6327

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Rev. 1.5

SIPMOS

Features

Type

BSS 83 P

Maximum Ratings,at T

Parameter

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

Avalanche energy, periodic limited by T

Reverse diode d v /d t

Gate source voltage

Power dissipation

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

ESD Class; JESD22-A114-HBM

Enhancement mode

P-Channel

Avalanche rated

Logic Level

d v /d t rated

Qualified according to AEC Q101

jmax

Halogen-free according to IEC61249-2-21

= -0.33 A, V

= -0.33 A , V

= 25 °C

= 70 °C

= 25 °C

= 150 °C

Small-Signal-Transistor

= -48 V, d i /d t = 200 A/µs,

= -25 V, R

Package

PG-SOT-23

= 25 °C, unless otherwise specified

= 25

Product Summary

Drain source voltage

Drain-source on-state resistance

Continuous drain current

H 6327: 3000pcs/r.

Tape and Reel

jmax

Page 1

Symbol

d v /d t

D puls

tot

j ,

Marking

YAs

stg

Pin 1

-55...+150

55/150/56

Class 0

Value

0.036

-0.33

-0.27

-1.32

0.36

9.5

DS(on)

PIN 2

2012-03-30

-0.33

BSS 83 P

-60

PIN 3

kV/µs

°C

Unit

VPS05161

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BSS83PH6327XT Summary of contents

Page 1

SIPMOS Small-Signal-Transistor Features · P-Channel · Enhancement mode · Avalanche rated · Logic Level · rated Qualified according to AEC Q101 Halogen-free according to IEC61249-2-21 Type Package BSS 83 P PG-SOT-23 Maximum Ratings, Parameter ...

Page 2

Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point ( Pin 3 ) SMD version, device on PCB: @ min. footprint cooling area Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage ...

Page 3

Electrical Characteristics Parameter Dynamic Characteristics Transconductance ³ DS(on)max D Input capacitance - MHz GS DS Output capacitance V = ...

Page 4

Electrical Characteristics Parameter Dynamic Characteristics Gate to source charge -0. Gate to drain charge -0. Gate charge total V = ...

Page 5

Power Dissipation tot A BSS 83 P 0.38 W 0.32 0.28 0.24 0.20 0.16 0.12 0.08 0.04 0. Safe operating area ...

Page 6

Typ. output characteristic =25° parameter µs p BSS 83 P -0. tot -0.60 -0.50 ...

Page 7

Drain-source on-state resistance DS(on) j parameter : I = -0. BSS 83 P 5.5 W 4.5 4.0 3.5 3.0 98% 2.5 2.0 typ 1.5 1.0 0.5 0.0 -60 - ...

Page 8

Avalanche energy para -0. - 105 Drain-source ...

Page 9

... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system ...

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