BSS314PEH6327XT Infineon Technologies, BSS314PEH6327XT Datasheet

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BSS314PEH6327XT

Manufacturer Part Number
BSS314PEH6327XT
Description
MOSFET OptiMOS -P 3 Small Signal Transistor
Manufacturer
Infineon Technologies
Datasheet

Specifications of BSS314PEH6327XT

Rohs
yes
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
- 1.5 A
Resistance Drain-source Rds (on)
140 mOhms at - 10 V
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
PG-SOT-23
Fall Time
2.8 ns
Gate Charge Qg
- 2.9 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
500 mW
Rise Time
3.9 ns
Typical Turn-off Delay Time
12.4 ns
Part # Aliases
BSS314PE BSS314PEH6327XTSA1 H6327

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSS314PEH6327XTSA1
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev 2.3
Features
• P-channel
• Enhancement mode
• Logic level (4.5V rated)
• ESD protected
• Qualified according AEC Q101
• 100% Lead-free; RoHS compliant
• Halogen-free according to IEC61249-2-21
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
ESD Class
Soldering Temperature
IEC climatic category; DIN IEC 68-1
OptiMOS™-P 3 Small-Signal-Transistor
Type
BSS314PE
Package
PG-SOT23
1)
j
=25 °C, unless otherwise specified
Tape and Reel Information
H6327: 3000 pcs/ reel
Symbol Conditions
I
I
E
dv /dt
V
P
T
D
D,pulse
j
AS
GS
tot
, T
stg
T
T
T
I
I
V
di /dt =-200A/µs,
T
T
D
D
JESD22-A114 -HBM
A
A
A
j,max
A
DS
=-1.5 A, R
=-1.5 A,
page 1
=25 °C
=70 °C
=25 °C
=25 °C
=-16 V,
=150 °C
GS
V
R
I
Product Summary
=25 W
D
DS
DS(on),max
Marking
YGs
1000V to 2000V
V
V
GS
GS
Lead Free
Yes
-55 ... 150
55/150/56
=-10 V
=-4.5 V
260 °C
Value
-1.5
-1.2
-6.1
±20
0.5
PG-SOT-23
6
6
1
1
2
BSS314PE
3
Packing
Non dry
-1.5
140
230
30
2
2012-10-19
3
Unit
A
mJ
kV/µs
V
W
°C
°C
°C
V
mW
A

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BSS314PEH6327XT Summary of contents

Page 1

OptiMOS™-P 3 Small-Signal-Transistor Features • P-channel • Enhancement mode • Logic level (4.5V rated) • ESD protected • Qualified according AEC Q101 • 100% Lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21 Type Package BSS314PE PG-SOT23 Maximum ratings ...

Page 2

Parameter Thermal characteristics Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current Gate-source leakage current Drain-source on-state resistance Transconductance 1) 2 Performed on 40mm FR4 PCB. The traces are ...

Page 3

Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode ...

Page 4

Power dissipation P =f(T ) tot A 0.5 0.375 0.25 0.125 [° Safe operating area I =f =25 ° parameter ...

Page 5

Typ. output characteristics I =f =25 ° parameter 4 Typ. transfer characteristics ...

Page 6

Drain-source on-state resistance R =f =-1 =-10 V DS(on 250 200 98 % 150 100 50 0 -60 - [° Typ. capacitances C =f ...

Page 7

Avalanche characteristics = =f parameter: T j(start [µ Drain-source breakdown voltage V =f =-250 µA BR(DSS) j ...

Page 8

Package Outline: Footprint: Dimensions in mm Rev 2.3 SOT-23 Packaging: page 8 BSS314PE 2012-10-19 ...

Page 9

... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system ...

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