IPD075N03LGATMA1 Infineon Technologies, IPD075N03LGATMA1 Datasheet
IPD075N03LGATMA1
Manufacturer Part Number
IPD075N03LGATMA1
Description
MOSFET
Manufacturer
Infineon Technologies
Datasheet
1.IPD075N03LGATMA1.pdf
(12 pages)
Specifications of IPD075N03LGATMA1
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
50 A
Resistance Drain-source Rds (on)
6.3 mOhms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
TO-252
Fall Time
2.8 ns
Forward Transconductance Gfs (max / Min)
61 S
Gate Charge Qg
18 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
47 W
Rise Time
3.6 ns
Part # Aliases
IPD075N03LGBTMA1 SP000680634
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