PSMN011-30YLC,115 NXP Semiconductors, PSMN011-30YLC,115 Datasheet

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PSMN011-30YLC,115

Manufacturer Part Number
PSMN011-30YLC,115
Description
MOSFET N-CH 30 V 11.6 MOHMS LOGIC LEVEL MOSFET
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN011-30YLC,115

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
37 A
Resistance Drain-source Rds (on)
11.6 mOhms at 10 V
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
SO-8
Gate Charge Qg
4.9 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
29 W
Factory Pack Quantity
1500
1. Product profile
Table 1.
Symbol
V
I
P
T
Static characteristics
R
Dynamic characteristics
Q
Q
D
j
DS
tot
DSon
GD
G(tot)
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
junction temperature
drain-source on-state resistance V
gate-drain charge
total gate charge
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
PSMN011-30YLC
N-channel 30 V 11.6 mΩ logic level MOSFET in LFPAK using
NextPower technology
Rev. 3 — 24 October 2011
High reliability Power SO8 package,
qualified to 175°C
Low parasitic inductance and
resistance
DC-to-DC converters
Load switching
Conditions
25 °C ≤ T
T
T
see
V
see
V
Figure
V
Figure
mb
mb
GS
GS
GS
GS
Figure 12
Figure 12
= 25 °C; V
= 25 °C; see
= 4.5 V; I
= 10 V; I
= 4.5 V; I
= 4.5 V; I
14; see
14; see
j
≤ 175 °C
D
D
D
D
GS
= 10 A; T
Figure 15
Figure 15
= 10 A; V
= 10 A; V
= 10 A; T
Figure 2
= 10 V; see
j
DS
DS
j
= 25 °C;
= 25 °C;
= 15 V; see
= 15 V; see
Figure 1
Optimised for 4.5V Gate drive utilising
NextPower Superjunction technology
Ultra low QG, QGD, & QOSS for high
system efficiencies at low and high
loads
Synchronous buck regulator
Min
-
-
-
-55
-
-
-
-
Product data sheet
Typ
-
-
-
-
12.3
9.9
1.4
4.9
175
Max
30
37
29
14.5
11.6
-
-
Unit
V
A
W
°C
mΩ
mΩ
nC
nC

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PSMN011-30YLC,115 Summary of contents

Page 1

... PSMN011-30YLC N-channel 30 V 11.6 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 3 — 24 October 2011 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment ...

Page 2

... ° j(init) ≤ Ω; unclamped; V sup GS see Figure 3 All information provided in this document is subject to legal disclaimers. Rev. 3 — 24 October 2011 PSMN011-30YLC Graphic symbol G mbb076 Version SOT669 Min Max - kΩ -20 20 Figure ...

Page 3

... Fig (A) 10 (1) ( All information provided in this document is subject to legal disclaimers. Rev. 3 — 24 October 2011 PSMN011-30YLC 100 150 Normalized total power dissipation as a function of mounting base temperature 003aag216 (ms) AL 03na19 200 T (°C) mb © ...

Page 4

... Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN011-30YLC Product data sheet Limit DSon All information provided in this document is subject to legal disclaimers. Rev. 3 — 24 October 2011 PSMN011-30YLC 003aag217 =10 μ 100 μ 100 (V) DS © ...

Page 5

... Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN011-30YLC Product data sheet Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 3 — 24 October 2011 PSMN011-30YLC Min Typ Max - 4.87 5.06 003aag218 tp δ ...

Page 6

... V; see Figure D DS see Figure MHz °C; see Figure 0.6 Ω 4.7 Ω R G(ext) All information provided in this document is subject to legal disclaimers. Rev. 3 — 24 October 2011 PSMN011-30YLC Min Typ Max 1.05 1.57 1. 100 - ...

Page 7

... /dt = -100 A/µ see Figure 18 003aag219 R (m Ω (V) = 3.0 GS 2.8 2.6 2.4 2 (V) DS Fig 7. All information provided in this document is subject to legal disclaimers. Rev. 3 — 24 October 2011 PSMN011-30YLC Min Typ - 3 ° DSon ...

Page 8

... I (A) D Fig 9. 003aag223 V GS(th) (V) Max (V) GS Fig 11. Gate-source threshold voltage as a function of All information provided in this document is subject to legal disclaimers. Rev. 3 — 24 October 2011 PSMN011-30YLC 150 ° Transfer characteristics; drain current as a function of gate-source voltage; typical values ...

Page 9

... I (A) D Fig 13. Normalized drain-source on-state resistance Q GD 003aaa508 Fig 15. Gate-source voltage as a function of gate All information provided in this document is subject to legal disclaimers. Rev. 3 — 24 October 2011 PSMN011-30YLC 2 a 4.5V 1.5 1 0 factor as a function of junction temperature (V) 24V ...

Page 10

... V (V) DS Fig 17. Source current as a function of source-drain All information provided in this document is subject to legal disclaimers. Rev. 3 — 24 October 2011 PSMN011-30YLC 150 ° 0.3 0.6 0.9 voltage; typical values 003a a f 444 ...

Page 11

... A 0 2.5 scale max 4.41 2.2 0.9 0.25 0.30 4.10 4.20 3.62 2.0 0.7 0.19 0.24 3.80 REFERENCES JEDEC JEITA MO-235 All information provided in this document is subject to legal disclaimers. Rev. 3 — 24 October 2011 PSMN011-30YLC detail (1) (1) ( 5.0 3.3 6.2 0.85 1.3 1.27 4.8 3.1 5.8 0.40 0.8 EUROPEAN PROJECTION ...

Page 12

... Various changes to content. PSMN011-30YLC v.2 20110930 PSMN011-30YLC Product data sheet Data sheet status Change notice Product data sheet - Preliminary data sheet - All information provided in this document is subject to legal disclaimers. Rev. 3 — 24 October 2011 PSMN011-30YLC Supersedes PSMN011-30YLC v.2 PSMN011-30YLC v.1 © NXP B.V. 2011. All rights reserved ...

Page 13

... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 3 — 24 October 2011 PSMN011-30YLC © NXP B.V. 2011. All rights reserved ...

Page 14

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 3 — 24 October 2011 PSMN011-30YLC Trademarks © NXP B.V. 2011. All rights reserved ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: PSMN011-30YLC All rights reserved. Date of release: 24 October 2011 ...

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