IPD105N03LGATMA1 Infineon Technologies, IPD105N03LGATMA1 Datasheet
IPD105N03LGATMA1
Manufacturer Part Number
IPD105N03LGATMA1
Description
MOSFET
Manufacturer
Infineon Technologies
Datasheet
1.IPD105N03LGATMA1.pdf
(12 pages)
Specifications of IPD105N03LGATMA1
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
35 A
Resistance Drain-source Rds (on)
10.5 mOhms
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
PG-TO252-3-11
Fall Time
2.4 ns
Forward Transconductance Gfs (max / Min)
51 S
Gate Charge Qg
14 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
38 W
Rise Time
14 ns
Typical Turn-off Delay Time
14 ns
Part # Aliases
IPD105N03LGBTMA1 SP000796910
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