FDMS86101A Fairchild Semiconductor, FDMS86101A Datasheet

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FDMS86101A

Manufacturer Part Number
FDMS86101A
Description
MOSFET 100V N-Channel PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FDMS86101A

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Continuous Drain Current
13 A
Resistance Drain-source Rds (on)
8 mOhms
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
Power-56
Minimum Operating Temperature
- 55 C
Power Dissipation
104 W

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMS86101A
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2012 Fairchild Semiconductor Corporation
FDMS86101A Rev.C
FDMS86101A
N-Channel PowerTrench
100 V, 60 A, 8 mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
D
J
DS
GS
AS
D
θJC
θJA
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
MSL1 robust package design
100% UIL tested
100% Rg tested
RoHS Compliant
, T
Pin 1
Symbol
Device Marking
STG
FDMS86101A
DS(on)
DS(on)
= 8 mΩ at V
= 13.5 mΩ at V
Top
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
GS
GS
= 10 V, I
FDMS86101A
-Continuous
= 6 V, I
-Continuous (Silicon limited)
-Pulsed
Device
Power 56
D
= 13 A
D
= 9.5 A
T
®
A
D
= 25 °C unless otherwise noted
MOSFET
D
Parameter
D
D
Bottom
Power 56
DS(on)
Package
1
S
T
T
T
T
T
S
General Description
This
Semiconductor‘s advanced Power Trench
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Application
C
C
C
A
A
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
S
DC-DC Conversion
Pin 1
G
N-Channel
Reel Size
13 ’’
(Note 1a)
(Note 1a)
(Note 1a)
(Note 3)
S
S
G
MOSFET
S
Tape Width
12 mm
is
-55 to +150
Ratings
produced using Fairchild
100
±20
180
486
104
1.2
2.5
60
81
13
50
®
process thant has
April 2012
www.fairchildsemi.com
3000 units
Quantity
D
D
D
D
Units
°C/W
mJ
°C
W
V
V
A

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FDMS86101A Summary of contents

Page 1

... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDMS86101A FDMS86101A ©2012 Fairchild Semiconductor Corporation FDMS86101A Rev.C ® MOSFET General Description This = Semiconductor‘s advanced Power Trench = 9.5 A been especially tailored to minimize the on-state resistance and D yet maintain superior switching performance ...

Page 2

... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. ° 486 mJ is based on starting mH ©2012 Fairchild Semiconductor Corporation FDMS86101A Rev °C unless otherwise noted J Test Conditions = 250 μ 250 μA, referenced to 25 °C ...

Page 3

... 120 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2012 Fairchild Semiconductor Corporation FDMS86101A Rev °C unless otherwise noted 5 μ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 4 ...

Page 4

... 125 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2012 Fairchild Semiconductor Corporation FDMS86101A Rev °C unless otherwise noted J 10000 1000 100 100 ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 - Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDMS86101A Rev °C unless otherwise noted J SINGLE PULSE 125 C/W θ RECTANGULAR PULSE DURATION (sec ...

Page 6

... L C PKG PIN #1 1 IDENT MAY TOP VIEW APPEAR AS OPTIONAL SIDE VIEW 1.27 (0.39) 1 0.71 0.44 CHAMFER CORNER AS PIN #1 IDENT MAY APPEAR AS OPTIONAL 8 BOTTOM VIEW 0.10 C 0.08 C 1.10 0.90 OPTION - A (SAWN TYPE) ©2012 Fairchild Semiconductor Corporation FDMS86101A Rev.C 5.10 A 4.90 PKG 0.77 4.52 3.75 6.25 5.90 1.27 4 1.27 SEE DETAIL A 3.81 0.46 (8X) 0.36 0. (0.50) 4.29 (1.81) 4 ...

Page 7

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2012 Fairchild Semiconductor Corporation FDMS86101A Rev.C ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ™ ...

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