PSMN015-60BS,118 NXP Semiconductors, PSMN015-60BS,118 Datasheet - Page 10

• Manufacturer Part Number: PSMN015-60BS,118
• Description: MOSFET N-CH 60 V 14.8 MOHM MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN015-60BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 4 V
• Continuous Drain Current: 50 A
• Resistance Drain-source Rds (on): 23.7 mOhms
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Power Dissipation: 86 W
• Factory Pack Quantity: 800

NXP Semiconductors
8. Revision history
Table 7.
PSMN015-60BS
Product data sheet
Document ID
PSMN015-60BS v.2
Modifications:
PSMN015-60BS v.1
Revision history
20111021
Release date
20120301
•
•
Status changed from objective to product.
Various changes to content.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Objective data sheet
Rev. 2 — 1 March 2012
N-channel 60 V 14.8 mΩ standard level MOSFET in D2PAK
Change notice
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-
PSMN015-60BS
Supersedes
PSMN015-60BS v.1
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© NXP B.V. 2012. All rights reserved.
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