PSMN015-60BS,118 NXP Semiconductors, PSMN015-60BS,118 Datasheet - Page 3

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PSMN015-60BS,118

Manufacturer Part Number
PSMN015-60BS,118
Description
MOSFET N-CH 60 V 14.8 MOHM MOSFET
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN015-60BS,118

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
4 V
Continuous Drain Current
50 A
Resistance Drain-source Rds (on)
23.7 mOhms
Mounting Style
Through Hole
Package / Case
D2PAK
Power Dissipation
86 W
Factory Pack Quantity
800
NXP Semiconductors
PSMN015-60BS
Product data sheet
Fig 1.
Fig 3.
(A)
(A)
I
10
I
10
D
10
D
10
-1
60
40
20
3
2
1
0
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
1
0
50
Limit R
DSon
100
= V
DS
/ I
D
150
All information provided in this document is subject to legal disclaimers.
T
mb
003aae028
(°C)
200
Rev. 2 — 1 March 2012
N-channel 60 V 14.8 mΩ standard level MOSFET in D2PAK
10
DC
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
50
PSMN015-60BS
100
V
DS
(V)
150
t
100 μs
© NXP B.V. 2012. All rights reserved.
p
100 ms
1 ms
10 ms
T
= 10 μs
003aae029
mb
03aa16
(°C)
10
200
2
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