PSMN015-60BS,118 NXP Semiconductors, PSMN015-60BS,118 Datasheet - Page 6

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PSMN015-60BS,118

Manufacturer Part Number
PSMN015-60BS,118
Description
MOSFET N-CH 60 V 14.8 MOHM MOSFET
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN015-60BS,118

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
4 V
Continuous Drain Current
50 A
Resistance Drain-source Rds (on)
23.7 mOhms
Mounting Style
Through Hole
Package / Case
D2PAK
Power Dissipation
86 W
Factory Pack Quantity
800
NXP Semiconductors
Table 6.
PSMN015-60BS
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(pF)
(S)
g
C
2000
1500
1000
fs
500
50
40
30
20
10
0
0
drain current; typical values
function of gate-source voltage; typical values
Forward transconductance as a function of
Input and reverse transfer capacitances as a
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
10
2
20
4
…continued
30
6
40
All information provided in this document is subject to legal disclaimers.
8
C
C
003aae033
003aae035
V
I
iss
rss
D
GS
(A)
Conditions
I
I
V
S
S
(V)
GS
= 15 A; V
= 25 A; dI
50
10
Rev. 2 — 1 March 2012
= 0 V; V
N-channel 60 V 14.8 mΩ standard level MOSFET in D2PAK
GS
S
DS
/dt = -100 A/µs;
= 0 V; T
= 30 V
Fig 6.
Fig 8.
R
(m Ω )
(A)
DSon
I
D
j
50
40
30
20
10
50
40
30
20
10
= 25 °C
0
0
function of gate-source voltage; typical values
of gate-source voltage; typical values
Transfer characteristics: drain current as a
Drain-source on-state resistance as a function
0
0
5
2
T
PSMN015-60BS
j
= 175 ° C
Min
-
-
-
10
4
Typ
0.8
31
28.5
15
T
© NXP B.V. 2012. All rights reserved.
j
V
= 25 ° C
GS
V
003aae032
003aae036
GS
(V)
-
Max
1.2
-
(V)
20
6
Unit
V
ns
nC
6 of 13

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