PSMN015-60BS,118 NXP Semiconductors, PSMN015-60BS,118 Datasheet - Page 7

• Manufacturer Part Number: PSMN015-60BS,118
• Description: MOSFET N-CH 60 V 14.8 MOHM MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN015-60BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 4 V
• Continuous Drain Current: 50 A
• Resistance Drain-source Rds (on): 23.7 mOhms
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Power Dissipation: 86 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN015-60BS
Product data sheet
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
GS(th)
(V)
(A)
I
D
60
40
20
5
4
3
2
1
0
0
−60
function of drain-source voltage; typical values
junction temperature
Output characteristics: drain current as a
0
0.5
0
10
7
6
5.5
60
1
max
min
typ
120
1.5
V
All information provided in this document is subject to legal disclaimers.
GS
5
V
003aad280
T
003aae031
j
(V) = 4
DS
(°C)
(V)
4.7
4.5
180
2
Rev. 2 — 1 March 2012
N-channel 60 V 14.8 mΩ standard level MOSFET in D2PAK
Fig 10. Sub-threshold drain current as a function of
Fig 12. Normalized drain-source on-state resistance
(A)
I
10
10
10
10
10
10
D
a
2.4
1.6
1.2
0.8
0.4
−1
−2
−3
−4
−5
−6
2
0
-60
gate-source voltage
factor as a function of junction temperature.
0
0
2
PSMN015-60BS
min
60
typ
4
120
max
V
© NXP B.V. 2012. All rights reserved.
GS
003aad696
T
j
(V)
(°C)
03aa35
180
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