NTP5864NG ON Semiconductor, NTP5864NG Datasheet
NTP5864NG
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NTP5864NG Summary of contents
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... D R MAX (Note 1) DS(ON) 12.4 mΩ N−Channel MARKING DIAGRAM & PIN ASSIGNMENT 4 Drain 4 TO−220AB CASE 221A NTP5864NG STYLE 5 AYWW 1 3 Gate Source 2 = Assembly Location Drain = Year = Work Week = Pb−Free Package ORDERING INFORMATION Package Shipping TO−220 50 Units / Rail (Pb−Free) ...
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ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance CHARGES AND CAPACITANCES ...
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7 100 6 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0.030 0.025 0.020 0.015 0.010 0.005 0.000 4 5 ...
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C iss 1500 1000 500 C oss C rss DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Capacitance Variation 1000 ...
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Duty Cycle = 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 TYPICAL CHARACTERISTICS 0.001 0.01 t, PULSE TIME (s) Figure 13. Thermal Response http://onsemi.com 5 0 ...
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... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...